| 姓名 | 林浩雄 |
|---|---|
| 職稱 | 教授 |
| 學歷 | 國立台灣大學電機博士 |
| 電子郵件 | |
| Tel | +886-2-33663670 |
| 辦公室 | 電機二館 419室 |
| 辦公室時間 | Thursday PM5:30~6:30, Friday AM8:00~9:00 |
| 著作列表網頁 | https://www.ee.ntu.edu.tw/publist1.php?teacher_id=901067&p=3 |
| 研究領域 |
主要的研究領域為三五族化合物半導體分子束磊晶技術與相關的光電元件技術。
(1) 低含氮化合物半導體(Diluted nitrides)： 在傳統半導體材料摻氮的低含氮半導體，因為氮的加入造成晶格與能隙的同時縮減。這個特點可以拓展
(2) 中紅外線(Mid-infrared, MIR)化合物半導體： MIR是許多化學氣體、液體、生物分子的吸收特徵波段。我們與英國Lancaster Univeristy合作以GSMBE
(3) 奈米結構的異質磊晶技術： 在矽與氧化物所構成的奈米結構中，使用分子束磊晶技術填入三五族材料。研究三五族與矽的異質磊晶， |
| 自傳 |
|---|
Hao-Hsiung Lin (林浩雄) was born in Taichung, Taiwan, 1956. He received the B.S., M.S., and Ph.D degrees in electrical engineering from National Taiwan University, Taiwan in 1978, 1980, and 1985, respectively. During his Ph.D. work, he invented the emitter-thinning structure of heterojunction bipolar transistor (HBT), which is currently used in commercial HBTs. He has been with the Department of Electrical Engineering at National Taiwan University since 1980, and was promoted as a full professor in 1992. He was a visiting scholar at Stanford university, working on molecular beam epitaxy and deep-level transient spectroscopy, in 1985. From 2001 to 2004, he served as the vice chairman of the Department of Electrical Engineering, National Taiwan University. His research area is the molecular beam epitaxy (MBE) of III-V compound semiconductors. Besides the aforementioned HBT structure, he invented the first InAsN mid-infrared quantum well laser operating at 2.4 mm. His current research interests are on the MBE growth of dilute nitrides, mid-infrared semiconductors, and nano-hetero-epitaxy of compound semiconductors. Dr. Lin is a member of the Chinese Institute of Engineers and a senior member of IEEE. |
| 實驗室名稱 | 位置 |
|---|---|
| 分子束磊晶實驗室 | 電機一館108室 |