實驗室名稱	分子束磊晶實驗室
位置	電機一館108室
研究方向	My research is mainly on the molecular beam epitaxial (MBE) growth of III-V compound semiconductors for electronic and optoelectronic device applications. The main facilities, MBE systems, located at R107 and R108, E. E. building I, are capable of depositing GaAs-based, InP-based, and Sb-based III-V semiconductors. Our current research works are aimed at (1) nanowire growth on Si platform for transistor applications, (2) highly mismatched III-V alloys such as InAsPSb and GaAsPSb, and (3) dilute nitrides and other III-V materials for high concentration solar cells.
設備	Gas-source molecular beam epitaxy system, Solid-source molecular beam epitaxy system, van der Pauw system, I-V and C-V measurement, probe station, and photoluminescence measurement.
分機	+886-2-33663619