實驗室名稱 前瞻性矽元件與製程實驗室
研究方向 His research includes SiGe/GeSn epi/photonics, stacked 3D transistors, thermal simulation (physics-based and neural network-based), IGZO TFT, and solar cells. He demonstrates the record high 2,400,000 cm2/Vs electron mobility in strained Si, the flicker noise of strained Si channel, the first CVD GeSn outperforming MBE in terms of hole mobility, the first stacked GeSn channels, and the first Si/SiGe/SiC MIS LEDs. He also invented the tree transistors, beyond FinFET and Stacked GAA.  He has 571+ papers (228+ journal papers, 24 IEDM, 3VLSI), 40 US patents, 38 Taiwan ROC patents, , 2 China patents, more than 5096 citations, 34 Ph.D. graduates, 128 master graduates, and current students of 15 Ph.D. and 10 masters. He has 5 graduate students as professors (1NTU, 1 NTNU, 1 NCHU, 1 NDHU, 1 NJUST), and 3 postdocs as professors (1 NTU, 1 NCU, 1 CGU)
設備
  1. EL/PL measurement system
  2. epi CVD
  3. HK/MG ALD
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