本所吳志毅教授實驗室團隊(參與學生: 林偉翔，羅元彥，程琮欽，徐誠志)與加州理工合作，研發成果刊登於Nature Communications期刊，特此恭賀。

Article: Single-step deposition of high mobility graphene at reduced temperatures

English Abstract:
We demonstrate a plasma-enhanced CVD chemistry that enables the entire process to take place in a single step, at reduced temperatures. The room temperature electrical mobility up to 60000 cm2/ V sec, better than that of large single-crystalline graphene derived from thermal CVD growth.

中文摘要:
我們開發出一種低溫(略高於室溫)製程的方法來成長單原子厚度的石墨烯薄膜，
室溫的載子遷移率可達60000 cm2/ V sec，此方式所成長的石墨烯品質高於一般高溫成長之石墨烯。

註:請參閱網頁

http://www.nature.com/ncomms/2015/150318/ncomms7620/full/ncomms7620.html