姓名 | 吳肇欣 |
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職稱 | 教授 |
學歷 | 美國伊利諾大學電機系博士 |
電子郵件 | |
Tel | +886-2-33663694 |
辦公室 | 明達館623室 |
網頁 | http://cc.ee.ntu.edu.tw/~ioedlab |
著作列表網頁 | https://www.ee.ntu.edu.tw/publist1.php?teacher_id=100130&p=3 |
研究領域 |
本實驗室位於電機二館307B,目前研究的主題為化合物半導體的電子及光電元件, (1) 三五族半導體電子與光電元件製程與應用:主要研究方向在設計與開發新型三五族 (2) 高速低能耗邏輯元件:研究下一代半導體邏輯運算元件,利用新型二維材料、三五族材料、 (3) 發光電晶體與電晶體雷射:本主題是在研究最新型的半導體光電元件,其重要性曾獲選為 (4) 光積體電路開發與應用:本研究應用電晶體雷射同時具有電訊號和光訊號輸出的特性,和 (5) 高功率元件的開發:應用在軍事、車用、及通訊上的功率放大器、交換器、震盪器等高功率、 (6) 高速光互聯:提供未來較大頻寬的短距離通訊媒介的元件,取代過往的銅導線,減少寄生電阻 |
自傳 |
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Chao-Hsin Wu received the B.S. degree in Electrical Engineering and M.S. degree in Graduate Institute of Photonics and Optoelectronics from National Taiwan University, Taipei, Taiwan, in 2002 and 2004, respectively. He used to work as a full-time teaching assistant in charge of Automatic Control Lab in the Department of Electrical Engineering in National Taiwan University from 2005 to 2006. He then joined the High-Speed Integrated Circuit group in University of Illinois at Urbana-Champaign in 2006 and received the Ph.D. degree in 2010. After finishing the Ph.D. degree, he continued working as a postdoctoral research fellow before he joined the faculty member in National Taiwan University.
In Illinois, he pioneered the development of novel III-V high-speed microelectronics and optoelectronics devices, including InGaN/GaN heterojunction bipolar transistors, InGaP/GaAs power amplifiers, and microcavity lasers. His research mainly focuses on the three-terminal light-emitting transistors (LETs) and transistor lasers (TLs). He has demonstrated the world-record optical spontaneous modulation bandwidth of 7 GHz (corresponding to a recombination lifetime of 23 ps), which is a breakthrough in semiconductor device technology history for the past 47 years. He has received the Nick and Katherine Holonyak, Jr. Graduate Research Award for the excellent achievement in semiconductor optoelectronics and high speed microelectronics area in 2010. |