研究領域 |
- III-V wide bandgap semiconductor devices: We are focusing on device modeling of Al/GaN HFETs,
which are applied in high power and high frequency area. - II-VI and III-V wide bandgap optoelectronic devices: Device modeling of quantum well/dot light
emitting diodes,Analysis of carrier transport, emission and absorption properties. - Smart sensor FETs: We are interested in studying the junction properties of ferroelectric/
semiconductordevices,which can be applied in memory, optical modular, waveguide, and sensor areas.
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