Yuh-Renn Wu
Name Yuh-Renn Wu
Title Professor and Chairman
Education Ph.D., Michigan Univ.,Ann Arbor, U.S.A.
Email
Tel +886-2-33669647
Office Ming-Da Hall, R617
Office hour Tuesday and Thursday 11:00 to 12:00 am
Website http://yrwu-wk.ee.ntu.edu.tw/
Publication List https://www.ee.ntu.edu.tw/publist1.php?teacher_id=941024&p=3
Research Topics
  1. III-V wide bandgap semiconductor devices: We are focusing on device modeling of Al/GaN HFETs,
    which are applied in high power and high frequency area.
  2. II-VI and III-V wide bandgap optoelectronic devices: Device modeling of quantum well/dot light
    emitting diodes,Analysis of carrier transport, emission and absorption properties.
  3. Smart sensor FETs: We are interested in studying the junction properties of ferroelectric/
    semiconductordevices,which can be applied in memory, optical modular, waveguide, and sensor areas.
Autobiography
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Prof. Yuh-Renn Wu received the Bachelor degree in Physics from National Taiwan University in 1998. He received his Master degree in Graduate Institute of Communication Engineering, National Taiwan University in 2000. After two years military service, he joined the Ph.D. program in Electrical Engineering and Computer science, University of Michigan, Ann Arbor in 2002 and obtained his Ph. D. degree at 2006. After being a short period of research fellow position in Michigan, he joined the Graduate Institute of Electro-Optical Engineering as an assistant professor in 2007. He is promoted as associate professor in 2011. Prof. Yuh-Renn Wu’s research area is focusing on the analysis and characterization of optical and semiconductor devices. During his study in the University of Michigan, Ann Arbor, He joined the Solid State Electronic Laboratory in Electrical Engineering and Computer Science department and worked in the analysis and modeling of high power electronic devices. He developed multi-dimensional Poisson, drift-diffusion and Schrodinger equation solver. He also developed Monte Carlo techniques in analysis of carrier transport and heat dissipation in high power GaN HFET devices. He also worked on the research of ferroelectric multi-functional devices and on developing the full bands k.p simulation programs for analysis of nitride quantum dot and quantum well band structures. His  current  research topics are  1.White light LED analysis and design. 2.Study of quantum well, quantum well, and quantum dot low deminsional systems. 3.High power nitride HFETs. 4. Ferroelectric material for high k and memory applications. 
Lab Title Location
Optoelectronic Device Simulation Laboratory R425B, EE BuildingⅡ
Year AcademicAdvising Category
2025 M.A
2025 Ph.D.
2024 M.A
2024 Ph.D.
2023 M.A
2023 Ph.D.
2022 M.A
2022 Ph.D.
2021 M.A
2021 Ph.D.
2020 M.A
2020 Ph.D.