Lab Title Molecular Beam Epitaxy (MBE) Lab.
Location R108, EE BuildingⅠ
Research Direction My research is mainly on the molecular beam epitaxial (MBE) growth of III-V compound semiconductors for electronic and optoelectronic device applications. The main facilities, MBE systems, located at R107 and R108, E. E. building I, are capable of depositing GaAs-based, InP-based, and Sb-based III-V semiconductors. Our current research works are aimed at (1) nanowire growth on Si platform for transistor applications, (2) highly mismatched III-V alloys such as InAsPSb and GaAsPSb, and (3) dilute nitrides and other III-V materials for high concentration solar cells.
Facility
  1. Gas-source molecular beam epitaxy system,
  2. Solid-source molecular beam epitaxy system,
  3. van der Pauw system,
  4. I-V and C-V measurement, probe station, and photoluminescence measurement.
Extension Number +886-2-33663619