January 2019 - April 2019
 
 
 
Publisher: Chairman Gong-Ru Lin  Editors: Professor Hsiang-Chieh Lee, Ms. Hsiao-wen Lin  May 30, 2019
 
 

Congratulations to GIPO Professor Guo-Dung Su on his research paper “One-lens camera using a biologically based artificial compound eye with multiple focal lengths” being published on Optica – a high impact factor SCI journal in optics and optoelectronics.

Article title: One-lens camera using a biologically based artificial compound eye with multiple focal lengths

Website: https://www.osapublishing.org/optica/abstract.cfm?uri=optica-6-3-326

NTU report website: http://host.cc.ntu.edu.tw/sec/schinfo/epaper/article.asp?num=1387&sn=16898

 
 

March “GIPO Colloquium” Highlights (Compiled by Li-Chi Yao)

Time:

2:20 pm, Mar. 8 (Fri.), 2019
Speaker: Professor Chia-Wei Sun, Department of Photonics, National Chiao Tung University
Topic: WIT120 optoelectronics technology
  GIPO had the honor of inviting Professor Chia-Wei Sun to deliver a speech concerning “WIT120 optoelectronics technology” at auditorium 101, Barry Lam Hall, on March 8, Friday. Professor Sun is a GIPO alumnus and has performed outstandingly in the academic circle. His speech was excellent, rich in content and the professor interacted very well with students. GIPO teachers and students benefitted greatly from this event.
 
 

 Professor Chia-Wei Sun (right) and GIPO Professor Hsiang-Chieh Lee (left)

 

Time:

2:20 pm, Mar. 15 (Fri.), 2019
Speaker: Professor Yoshiaki Yasuno, University of Tsukuba, Japan
Topic: 1. Signal and image processing of optical coherence tomography

2. Multi-functional optical coherence tomography imaging of eye

 

GIPO had the honor of inviting Professor Yoshiaki Yasuno to deliver a speech concerning “Signal and image processing of optical coherence tomography” and “Multi-functional optical coherence tomography imaging of eye” at auditorium 105, EE Building II, on March 15, Friday. His speech was fascinating, and the professor interacted very well with students. GIPO teachers and students participated with enthusiasm and gained a lot from the event.

 
 

 Professor Yoshiaki Yasuno (left) and GIPO Professor Hsiang-Chieh Lee (right)

 

Time:

2:20 pm, Mar. 29 (Fri.), 2019
Speaker: Professor Yu-Chieh Cheng, Department of Electro-Optical Engineering, National Taipei University of Technology
Topic: Near-field flat focusing mirrors
  GIPO had the honor of inviting Professor Yu-Chieh Cheng to deliver a speech concerning “Near-field flat focusing mirrors” at auditorium 105, EE Building II, on March 29, Friday. Her speech is marvelous, rich in contents, and the professor interacted well with students. GIPO teachers and students participated in the event with great enthusiasm and learned a great deal.
 
 

Professor Yu-Chieh Cheng (left) and GIPO Professor Hsiang-Chieh Lee (right)

 

 
 

~ 2018 Ph.D. Student Academic Exchange with Nanjing University ~

(The 11th Cross-Strait Ph.D. Student Forum on Photonic Science and Technology, 2018)

(Time: Nov. 7-11, 2018; Location: National Taiwan University)

Composed by Jun-Yu Huang, GIPO Ph.D. student

The Cross-Strait Ph.D. Student Forum on Photonic Science and Technology is an important annual academic exchange for GIPO, NTU, and School of Physics, Nanjing University (NJU). In 2008, GIPO Professor C. C. (Chih-Chung) Yang and academician Shining Zhu, Nanjing University, achieved a consensus for establishing the forum, opening up an over ten-year-long interchange of academic knowledge and ideas. Moreover, it is not just a formal exchange, but also includes several instances of practical cooperation between the two universities. This year, there are 15 NJU students and 10 NTU students representing both sides to participate in this interflow event.

NTU Interim President Tei-Wei Kuo addresses the forum.

GIPO Vice Chairman Jian-Jang Huang hosts the forum’s opening ceremony.

Generally speaking, this exchange is not just an academic exchange but also a wonderful learning opportunity for participating students. It is different from conferences or forums that I have attended before. This exchange is planned and prepared for thoroughly by the students of the host university themselves. Therefore, with NTU as this year’s host university, students have learned a lot from its planning and preparation. Furthermore, we added something more lively and interactive into this year’s forum, which is a bit different from previous years’ forums, such as raising questions during meetings and inviting discussions during poster sessions. All are deliberately designed to let attendants feel a greater sense of involvement. During the forum, both NJU and NTU’s students performed rather well. NJU student Xiaohui Tian, in particular, gave detailed explanations of some novel and complicate subjects concerning entangled photon pairs and its applications, including the fascinating issue of another possibility of the quantum computer; therefore, she obtained NJU’s best paper award. NTU student Chih-Hao Chuang elaborated on the recently hot scientific research topic of 3D AR imaging technique, including their laboratory’s research results and the exhibition of their real product. Eventually, he was also awarded NTU’s best paper award.

 

Nanjing University’s best student paper award winner – Xiaohui Tian

National Taiwan University’s best student paper award winner – Chih-Hao Chuang

It appears that NTU GIPO and NJU School of Physics’s research fields are quite different. Due to Taiwan’s industrial structures, NTU’s research fields tend to be focused on Taiwanese common industries, such as the manufacturing and theoretical research involving semiconductors, optics system design, and light-emitting diodes. Nevertheless, NJU’s research fields tend to be focused on physics’ theories, such as the studies of entangled photon pairs, biophysics, and quantum physics, and their research categories are comparatively extensive. Subsequently, all participants had the opportunity to discuss and learn new things with different field’s Ph.D. students and henceforth stimulate fresh ideas and unique thinkings.

Presented students are attentively listening to the presentation.

A group photo of all participants

At the second day of the forum, at noon, GIPO Chairman Professor Gong-Ru Lin delivered a speech concerning the introduction of Taiwanese snacks, which impressed all of us greatly. At the same time, we provided some real Taiwanese snacks for the far-from-home mainland Chinese students to enjoy. Having twice the satisfaction, in mind and in the stomach, greatly pleased students from both universities. And finally, this forum came to an end amid student laughter and gourmet foods.

 

 
 
Swept-Source Optical Coherence Tomography Imaging of the Guinea Pig Cochlea

Professor Hsiang-Chieh Lee

Graduate Institute of Photonics and Optoelectronics, National Taiwan University

OCT is an imaging modality that can be illustrated as the optical analog to ultrasound, where focused light illuminates a sample and backscattered light is collected under use of interferometry. On the other hand, the inner ear is a small and sophisticated organ, mainly comprising the vestibular system and cochlea. In this study, we leverage the technology of swept-source optical coherence tomography to obtain the ex vivo volumetric image of the guinea pig cochlea allowing a better understanding of the cochlear architectures, serving an important step for the subsequent in vivo applications. Moreover, two different center wavelength light sources, i.e. 1.06 µm and 1.3 µm, were used to develop two separate OCT systems, enabling a more detailed investigation on the tissue architectures of the guinea pig cochlea at different regimes as well as different imaging resolutions.

Fig.1 (a) Cross-sectional OCT image of the guinea pig cochlea showed the features with lower OCT scattering intensity reminiscent of the structure in the guinea pig cochlea as shown in (f), the light micrograph of the guinea pig, and inner red line and blue line indicate the position of the en face images (c) and (d), respectively. Yellow and green lines in (c) indicate the position of the cross-sectional images (a) and (b), respectively. Note (f) is reprinted from a previous publication [1]. (M: modiolus; RM: Reissner's membrane, ST: scala tympani; SM: scala media; OC: organ of Corti; SV: scala vestibuli)

 

Fig.2 (a) Cross-sectional OCT image of the guinea pig cochlea for 1060 nm SS-OCT system in terms of another transverse scanning direction. (b) for 1030 nm SS-OCT system.

 

Reference:

[1] Y. Raphael and R. A. Altschuler, "Structure and innervation of the cochlea," Brain Res Bull, vol. 60, no. 5-6, pp. 397-422, Jun 15 2003.

 

 

Efficiency enhancement of light color conversion through surface plasmon coupling

Professor C. C. Yang’s Lab.

Graduate Institute of Photonics and Optoelectronics, National Taiwan University

The efficiency enhancement of light color conversion from blue quantum well (QW) emission into red quantum dot (QD) emission through surface plasmon (SP) coupling by coating CdSe/ZnS QDs on the top of an InGaN/GaN QW light-emitting diode (LED) is demonstrated. Ag nanoparticles (NPs) are fabricated within a transparent conductive Ga-doped ZnO interlayer to induce localized surface plasmon (LSP) resonance for simultaneously coupling with the QWs and QDs. Such a coupling process generates three enhancement effects, including QW emission, QD absorption at the QW emission wavelength, and QD emission, leading to an overall enhancement effect of QD emission intensity. An Ag NP geometry for inducing an LSP resonance peak around the middle between the QW and QD emission wavelengths results in the optimized condition for maximizing QD emission enhancement. Internal quantum efficiency and photoluminescence (PL) decay time measurements are performed to show consistent results with LED performance characterizations even though the QD absorption of PL excitation laser may mix with the SP-induced QD absorption enhancement effect in PL measurement. Figure 1 schematically shows the SP coupling mechanism. Figures 2(a)-2(c) show the SEM images of Ag NPs in samples D/E-500, -540, and -580, respectively. Figure 3 shows the transmission spectra of the three Ag NP samples. The transmission depressions correspond to their LSP resonances. A deeper depression at a wavelength indicates stronger LSP resonance. Figure 4 shows the normalized emission intensities as functions of QW injection current in various samples. Among them, the color conversion efficiency of sample D-540 is the highest through LSP coupling.

 

Fig.1 SP coupling mechanism

 

Fig. 2 (a)-(c): SEM images of Ag NPs in samples D/E-500, -540, and - 580, respectively.

 

Fig. 3 Transmission spectra showing LSP resonances.

 

Fig. 4 Emission intensities of QDs in different samples.

 

 

Different surface plasmon coupling behaviors of a surface Al nanoparticle between TE and TM polarizations in a deep-UV light-emitting diode

Professor Y. W. Kiang’s Laboratory

Graduate Institute of Photonics and Optoelectronics, National Taiwan University

The formulations and numerical algorithms of a three-level model for studying the Purcell effect produced by the scattering of an air/AlGaN interface and the surface plasmon (SP) coupling effect induced by a surface Al nanoparticle in a two-polarization emission system to simulate the transverse-electric- (TE-) and transverse-magnetic- (TM-) polarized emissions in an AlxGa1-xN/AlyGa1-yN (y > x) quantum well (QW) are built. In reasonably selected ranges of Al content for an AlGaN QW to emit deep-ultraviolet (UV) light, the enhancement (suppression) of TE- (TM-) polarized emission is mainly caused by the SP-coupling (interface-scattering) effect. Different from a two two-level model, in the three-level model the TE- and TM-polarized emissions compete for electrons in the shared upper state, which is used for simulating the conduction band, such that either interface-scattering or SP-coupling effect becomes weaker. In a quite large range of emission wavelength, in which the intrinsic emission is dominated by TM polarization, with the interface-scattering and SP-coupling effects, the TE-polarized emission becomes dominant for enhancing the light extraction efficiency of a deep-UV light-emitting diode.

Fig. 1. Four structures for computing the TE- and TM-polarized radiated powers, including the intrinsic (IN) case in (a), the reference (RE) case in (b), the SP-coupling (SP) case without a SiO2 interlayer in (c), and the SP-coupling (SP) case with a SiO2 interlayer in (d).

Fig. 2. Radiated powers of the TE and TM dipoles normalized with respect to individual levels in the reference case based on either two- or three-level model. The curve of TE-2 (TM-2) corresponds to the ratio of pTE/SP-2 (pTM/SP-2) over pTE/RE-2 (pTM/RE-2). The curve of TE-3 (TM-3) corresponds to the ratio of pTE/SP-3 (pTM/SP-3) over pTE/RE-3 (pTM/RE-3).

 

InGaAs photodetector grown on InP substrate with InAsxP1-x metamorphic buffer layers

Professor Hao-Hsiung Lin’s Laboratory

Graduate Institute of Photonics and Optoelectronics, National Taiwan University

In this work, instead of traditional InAlAs metamorphic buffer, we used step-graded InAsxP1-x layers as the metamorphic buffer for InGaAs/InAsP SWIR photodetectors. InAsP is a mixed group 5 alloy and has the advantages of constant grown rate and low interaction parameter. An In0.69Ga0.31As photodetectors was grown strain-freely on top of the InAsP step-graded layers by MOVPE. Figure 1 show the RSMs for (004) and (115) reflections obtained from the sample, the In0.69Ga0.31As is almost fully relaxed through the using of InAsxP1-x step-graded buffer layers. Figure 2 is a cross-sectional TEM image of the buffer layers showing that misfit dislocations are confined in the buffer layers. No threading dislocation is observed in the In0.69Ga0.31As absorption layer. Figure 3 shows the I-V of a typical metamorphic InGaAs/InAsP detector with a dark current of 4.5×10-4 A/cm2 at -0.5 V, indicating the good quality of the epilayers. Figure 4 shows the spectral response at zero bias of a detector with a cutoff wavelength of 2.25 µm.

Figure 1. (004) and (115) RSM of InAsP/InGaAs/InAsP/InP structure.

Figure 2. Cross-sectional TEM image of InAsP/InGaAs/InAsP/InP structure.

Figure 3. I-V curve of a InGaAs/InAsP detector. Device area is 4×10-4 cm2.

Figure 4. Spectral response of a InGaAs/ InAsP detector.

 

 
 
 
 
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