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High-efficiency blue thermally activated delayed fluorescence organic light-emitting diode with a novel host material
Professor Jiun-Haw Lee
Graduate Institute of Photonics and Optoelectronics, National Taiwan University
台湾大学光电所 李君浩教授
A blue organic light-emitting diode (OLED) based on thermally activated delayed fluorescence (TADF) exhibiting maximum external quantum efficiency of 35.8% was demonstrated with 2,3,5,6-Tetrakis[3,6-bis(1,1-dimethylethyl)-9H-carbazol-9-yl]benzonitrile (4TCzBN) as the TADF emitter doped into a novel host material consisting of acridan, carbazole, and benzimidazole moieties. With carefully design of this novel host, photoluminescence quantum yield of the thin film was as high as 98.7%, together with horizontal dipole ratio of 88% for enhancing the light extraction efficiency up to 41.2%. Besides, the electrical and optical bandgap of the host was perfectly matched to the dopant together with suitable hole and electron mobilities which resulted in a low driving voltage and the maximum power efficiency of 62.8 lm/W.
Reference:
Yi-Zhen Li et al., Chem. Eng. J. 498, 155553, 2024.
Characterizations of sidewall recombination behaviors of AlGaInP red light-emitting diodes with micron-scale mesa size by steam oxidation
Professor Jian-Jang Huang's Laboratory
Graduate Institute of Photonics and Optoelectronics, National Taiwan University
台湾大学光电所 黄建璋教授
We report size and oxidation temperature-dependent performance optimization of sidewall steam oxidation for AlGaInP red micro-light-emitting diodes (µLEDs). Devices with mesa sizes from 100 × 100 μm² down to 5 × 5 μm² were fabricated. Our results reveal that steam oxidation significantly enhances light output and suppresses nonradiative recombination, with optimal oxidation time decreased with device size. At cryogenic temperatures, the best performance is achieved at even shorter oxidation times, highlighting the need for condition-specific processing. Through ABC model, we show that sidewall oxidation reduces Shockley–Read–Hall recombination and enhances radiative efficiency, particularly in small devices. This study provides a practical guideline for optimizing sidewall treatment to improve the performance of AlGaInP µLEDs for high-resolution display applications.
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Fig. 1. (a) Illustration of the steam oxidation process in the furnace. Side view profile of the micro-LED without sidewall oxidation (b) and with sidewall oxidation (c).
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Fig. 2. Luminescence from the device (a) 100 x 100 (b) 50 x 50 and (c) 25 x 25 μm² and (c) B-25. (d) TEM image of mesa sidewall of B-25.
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