Graduate Institute of Photonics and
Optoelectronics, National Taiwan University
臺灣大學光電所 林浩雄教授
Because of the strong internal bond
distortion resulting from highly mismatched bond lengths, the InPSb and InAsPSb
alloys are with a lot of peculiar properties which have not been fully understood yet. We used VG V80H GSMBE to grow the two alloys on InAs and GaAs. Also, with the surprising property that the lattice constant of InAsPSb remains approximately equal to that of InAs, we can treat the quaternary alloy as a buffer layer between GaAs and InAs. Results show that the buffer layer is feasible, although there are some stacking faults in the interface.
Fig. 1. XRD of InPSb grown on InAs and GaAs substrates. C3723 shows a sharp and narrow-line width epilayer signal without phase separation.
Fig. 2. XRD of InAsPSb grown on InAs and GaAs substrates. No matter how the composition changes, the diffraction angles of InAsPSb keep approximately equal.
Fig. 3. (004) and (115) RSM of InAs/InAsPSb/GaAs structure.
Fig. 4. HRTEM cross-section view of InAs/InAsPSb/GaAs structure.
