发行人:黄升龙所长    编辑委员:蔡睿哲教授    主编:林筱文    发行日期:2008.08.01

最新消息与活动公告    所务公告及活动花絮    特别报导    迈向顶尖大学计划研究成果专栏

光电所博士班应届毕业生研究成果专栏    光电要闻    健康小站

所务公告及活动花絮

 

2008学年度所学会会长刘光中就任感言~

非常荣幸能够担任光电所学会会长。首先要感谢光电所的各位同学,愿意给我一个机会为大家服务。在这里也要感谢江宏礼同学,以及潘昆懋同学,帮我处理了许多所学会以及实验室的事务,让我可以无后顾之忧。

2007年的9月入学迄今,在光电所这个大家庭也度过了一年的光景。我想会让我担任所学会会长的原因有很多,最重要原因的在于,在光电所这一年生活当中,我和大家一起上课、做实验、踢球、联谊。几乎大部分的时间都是与同学们度过。我开心时,同学们总是愿意倾听分享我的喜悦;而在我失落遇到挫折时,身边的朋友们也带给我许多建议与鼓励。这段时间内,我感受到光电所的老师与同学们带给我的温情,让我了解自己是这个大家庭里的一份子,更希望自己也能为光电所尽一份心力,把自己体会到的喜悦带给大家。

有鉴于过去的一年中,常听到同学在讨论,相对于电资学院其它研究所而言光电所的活动实在太少,不免有些遗憾。因此在未来的一年中,所学会的重心将放在为同学们举办联欢活动,类型丰富,以期能够促进各实验室的感情。活动包括有餐会、运动比赛,以及艺文活动等,敬请期待,并请大家踊跃参与。同时我们期望能够建立起学生跟所办公室以及教授之间沟通的管道,让学生们能够对光电所的事务发表建议。

虽然跟光电所许多的前辈比起来,我无啻是个新人。但我愿以一颗充满热诚的心,在任期内全心奉献于所学会。也请光电所的每一份子不吝批评指教与协助,让所学会能够为大家提供最完美的服务。

 

迈向顶尖大学计划研究成果专栏

 

Optical Characterization of CO2-Laser-ablated Si rich SiOx

Professor Gong-Ru Lin

Graduate Institute of Photonics and Optoelectronics, National Taiwan University

台湾大学光电所林恭如教授

 Anomalous absorption and the corresponding change in the optical band gap of a CO2-laser-ablated Si-rich (SiOx) film are studied.  The optical band gap energy of as-grown nonstoichiometric SiOx is slightly reduced by increasing Si–Si bonds as compared to quartz.  After rapid thermal annealing using a CO2 laser, the dehydrogenation of SiOx film further increases the Si–Si bonding states and redshifts the optical band gap by 1 eV (see Figure 1a and 1b).  Laser ablation is initiated at a laser intensity of >7.5 kW/cm2 (see Figure 2), leaving numerous luminescent centers that are related to neutral oxygen vacancy defects, increasing the absorption coefficient and related optical band gap energy, and reducing the refractive index in partially annealed SiOx (see Figure 3a and 3b).

 

 In summary, the anomalous absorption spectra and corresponding changes in optical band gap energy, band edge absorption, and structurally damaged related luminescent centers of the CO2-laser-ablated PECVD-grown SiO1.25 film were characterized using UV-VIS-NIR transmission/ reflection and PL spectroscopies.  After PECVD deposition, a slight redshift in the transmission and the lower optical band gap energy of as-grown SiO1.25 in comparison with those of quartz substrate are due to the increase in the Si–Si bonding state in SiO1.25 near the valence and conduction band edges.  Since the as-grown SiO1.25 film contains a high concentration of hydrogen, dehydrogenation not only reduces the thickness of the PECVD-grown SiO1.25 film but also enhances the number of Si–Si bonding states under CO2 laser RTA below the ablation threshold (6 kW/cm2), hence contributing to a redshift of the optical band gap from 3.32 to 2.43 eV.  As the CO2 laser RTA intensity increases to >6 kW/cm2, the optical band gap energy of the PECVD-grown SiO1.25 increases oppositely from 2.43 to 2.76 eV due to the ablation-induced damage to the surface and the generated NOV defects.  The absorption coefficient of the SiO1.25 film at a wavelength of 455 nm is increased by a factor of 3 as the CO2 laser intensity is increased from 7.5 to 12 kW/cm2.  During ablation, the incompletely annealed SiO1.25 with numerous oxygendependent defects also suffers from a slight decrease in the refractive indices from 1.87 to 1.79 when Plaser increases from 7.5 to 12 kW/cm2.

 

FIG. 1a. Transmission change of as-grown SiO1.25 and CO2 laser annealed SiO1.25 at Plaser=6 kW/cm2. (Inset: Transmission spectra of pure quartz)

FIG. 1b. Absorption spectra of as-grown SiO1.25 and CO2 laser annealed SiO1.25 at Plaser=6 kW/cm2. (Inset: The calculated absorption spectra of Si29H24 and Si29H36)

 

FIG. 2. Optical band gap of CO2 laser annealed SiO1.25 as a function of laser intensity. (Inset: Tauc plot, (ahn) 1/2 as a function of photon energy (hn) for as-grown SiO1.25 sample and CO2 laser RTA SiO1.25 samples at Plaser from 6 to 12 kW/cm2)

 

FIG. 3a. PL spectrum of PECVD-grown SiO1.25 annealed at CO2 Plaser of 7.5 kW/cm2 and transmission change of as-grown SiO1.25 and CO2 laser annealed SiO1.25 at Plaser of 6 and 7.5 kW/cm2.

FIG. 3b. Refractive index and absorption coefficient of CO2 laser RTA SiO1.25 as a function of laser intensity.

 

 

 

Patterned microlens array for efficiency improvement of small-pixelated organic light-emitting devices

Research groups of Prof. Hoang-Yan Lin and Prof. Jiun-Haw Lee

Graduate Institute of Photonics and Optoelectronics, National Taiwan University

(e-mail) hylin@cc.ee.ntu.edu.tw

台湾大学光电所林晃岩教授

 We experimentally and theoretically investigated the optical characteristics of organic light-emitting devices (OLEDs), having different pixel sizes and attached with patterned microlens array films. For a regular microlens array (Fig. 1(b)), though it can extract the waveguiding light and increase luminous current efficiency for a large-pixelated OLED, we observed that it decreased the luminance to an even lower level than that of the planar OLED as its pixel size was close to the microlens dimension (Fig. 2). Although a microlens can effectively outcouple the light rays originally at incident angles larger than the critical angle, it also can impede the outcoupling for the light rays originally at incident angles smaller than the critical angle. Enhancement or reduction of the light extraction depends on the relative positions of the light emitting point and the microlens. Therefore, we proposed a center-hollowed microlens array (Fig. 1(c)), of which the microlenses directly upon the pixel are removed, and proved that it can increase the luminous current efficiency and luminous power efficiency of a small-pixelated OLED. As can be seen from Fig. 3, by attaching this patterned microlens array, 87% of luminance enhancement in the normal direction was observed for a 0.1´0.1 mm2 OLED pixel. On the other hand, a regular microlens array resulted in 4% decrease under the same condition.

 

Fig. 1. The OLEDs attached (a) without, and with (b) a regular and (c) a center-hollowed microlens array.

 

Fig. 2. The relationships between the relative luminance at normal direction and the pixel size of the OLEDs attached with regular microlens arrays: (a) experimental and (b) simulated results.

 

Fig. 3. The angular-dependent luminance of the OLED attached with a regular microlens array or with a center-hollowed array.

*This paper was published in OPTICS EXPRESS, Vol. 16, No. 15, pp. 11044-11051, 21 July 2008.

 

 

 

Electrical and Optical Characteristics of OLED with Bipolar Emitting Layer

Research group of Prof. Jiun-Haw Lee

Graduate Institute of Photonics and Optoelectronics, National Taiwan University

台湾大学光电所李君浩教授

 One of the root causes which limits the operation lifetime of organic light-emitting device (OLED) is the charged carriers piled-up at the interface of transporting layer and emitting layer (EML). By introducing the bipolar EML, the recombination zone in an OLED becomes wider which effectively elongated the operation lifetime. We have demonstrated the performance improvement and studied the electrical and optical characteristics of OLEDs with bipolar EML quantitatively and qualitatively.

 

 We used high-electron-mobility ETL material, bis(10-hydroxybenzo[h] qinolinato)beryllium (Bebq2), mixed with a-naphthylphenylbiphenyldiamine (NPB) as the bipolar EML. We have demonstrated an OLED with a luminance of 27600 cd/m2 at only 5 V, and a lifetime four times longer than that of a conventional device. Since the recombination zone was wider, the maximum luminance in a bipolar OLED can be as high as 288000 cd/m2 with the current density over 7 A/cm2, which may be suitable for flashlight applications. Not only the performance improvement, we also discussed the carrier transport characteristics in a bipolar EML from current-voltage characteristics and the recombination process from the electro-luminescence measurement. We found an optimized mixing ratio which was NPB:Bebq2=1:1 with highest current density due to the electron-hole balance in this bipolar EML. The spectral shift was due to the recombination shift and the solid-state solvation effect.

 

 Besides, we used two different methods to quantitatively investigate the recombination zone in the MH-EML consisting of NPB and tris-(8-hydroxyquinoline) aluminum (Alq3). The first method was by using rigorous electrical and optical models to simulate the carrier distribution, recombination distribution, and EL spectra in the MH-OLED. By fitting the J-V curves and the spectra with different mixing ratios, the mobility values can be extracted. Electron (hole) mobility decreased (increased) monotonically with increasing the NPB ratio. However, the driving voltage increased then decreased due to the competition between the hole-current enhancement and the electron-current decline. For the second method, we used a thin 4-(dicyanomethylene)-2-tert-butyl-6-1,1,7,7-(tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) layer with the thickness of 1.2 nm and the volume concentration of 2% as a probe to determine the recombination zone. Besides, we also found that when the probe position overlapped the maximum recombination position, a voltage reduction of 1.97 V was observed. It can be well explained by the enhancement of the recombination current from the continuity equation. This result suggested that the driving voltage of an OLED with the bipolar EML can be reduced by inserting a dopant in a suitable region. A white OLED was fabricated with selectively doping a yellow dopant in the blue EML which exhibits high efficiency and low driving voltage.

 

 

 

光电所博士班应届毕业生研究成果专栏

 

论文题目:使用新颖材料与组件结构之高效率磷光有机发光组件

姓名:蔡明翰

指导教授:吴忠帜

摘要

在蓝光磷光组件的开发上,高三重态能阶主体材料是一项重要关键。故我们首先研究具有高三重态能阶之电洞传导材料与电子传导材料,以及高效率之蓝光磷光组件结构。次一主题是探讨新型多功能主体材料;其后并具体实现单层之高效率红光磷光组件。接着藉由高三重态能阶双极性传导材料之开发,成功地将高效率单层磷光组件推展到绿光与蓝光。此外,我们对于使用磷光主体材料以利用偶极矩作用能量转移机制之组件亦有探讨。本论文最后则研究混合荧光与磷光之白光有机发光组件,以期能实现固态照明之应用。

 

 

光电要闻

 

— 数据提供:影像显示光电科技特色人才培育中心.影像显示科技知识平台 —

— 整理:林晃岩教授、陈冠宇 —

 

MEMS开关驱动的OLED面板  

 南韩科学与技术学院(KAIST)在SID 2008国际研讨会中,进行编号3-4论文之口头报告,主旨是使用MEMS开关代替驱动有机ELTFT。此举之用意是在打破以往使用的硅TFT在大屏幕制作时与可靠性方面存在的限制。目前对有机EL的驱动通常是使用硅薄膜晶体管(TFT)。然而目前作为主流的低温多晶硅TFT,对于再结晶制程中所使用的激光退火装置,在大画面组件制程方面仍然存在问题。此外,非晶硅和微晶硅的TFT,则存在着其阈值电压会随时间而变化的问题。

 

 为了解决上述这些问题,KAIST在此次研讨会中提出了使用MEMS开关技术来驱动有机ELMEMS在显示的应用方面,目前多以其作为光的切换开关,例如:德州仪器的DLPQualcommiMoDSilicon Light MachineGLV;而KAIST所提出的MEMS开关,则是采用脉冲宽度调变(PWMpulse width modulation)的数字电路来驱动有机EL工作。

 

 如图一与图二所示,KAIST试制了50 μm×10 μmMEMS开关,电流可达15 mA;在hot switching模式底下(57 μA100 Hz)可达1.3×105个操作周期,相当于22分钟左右。如图三与图四所示,将该开关与有机EL组件连接并进行驱动,证实了数字灰阶显示的可能性,此次发表所获得的结果是:在电压VDD10 V、脉冲频率为60 Hz的条件下,最大辉度为1781 cd/m2duty cycle50%时的辉度为914 cd/m2duty cycle5%的辉度为98.27 cd/m2

 

   

图一KAIST试制的MEMS开关
 
图二KAIST试制的MEMS开关的制造方法
 
图三:用MEMS开关驱动有机EL
 
图四:证实基于脉冲宽度调变的数字灰阶显示的可行性

 

 

中文新闻:

http://big5.nikkeibp.co.jp/china/news/news/semi200805260112.html

 

 

 

健康小站

 

不睡枕头,小心落枕?

有此一说

不睡枕头容易落枕也容易造成颈部或脊椎的伤害?

KingNet 家庭医学科医师回答
台北县三重市卫生所主任 张必正医师

所谓的落枕,其实是颈部的筋膜炎,也就是因为颈部的肌肉不当使用或使用过度引起肌肉发炎以致于转动时造成疼痛。往往是因为枕头的柔软度、高度等因素,造成颈部姿势不自然,经过一个晚上的不当施力,而造成筋膜炎。

不睡枕头并不会直接造成颈椎的伤害,只是可能导致颈部肌肉的过度伸张,容易造成酸痛,但每个人可以因为自己的舒适度做认定。枕头的硬度、高度让您觉得舒适,容易入睡,隔天也无不适,就是最好的枕头。

落枕一旦发生,切忌再过度扭动颈部肌肉,以免造成更严重伤害

 

本文由【KingNet 国家网络医院】提供

 

版权所有   国立台湾大学电机信息学院光电工程学研究所   http://gipo.ntu.edu.tw/

欢迎转载   但请注明出处   http://gipo.ntu.edu.tw/monthly.htm