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¡@ Observation of 394 nm Electroluminescence from Low-Temperature Sputtered n-ZnO/SiO2 Thin Films on top of the p-GaN Heterostructure Professor JianJang Huang Graduate Institute of Photonics and Optoelectronics, National Taiwan University »OÆW¤j¾Ç¥ú¹q©Ò¶À«Ø¼ý±Ð±Â ZnO, with a large direct bandgap of 3.37eV, is a promising material for ultraviolet (UV) light emissions or photo detections. It possesses unique characteristics such as a large exciton binding energy of 60meV (versus 26meV for GaN), easy processing due to amenability to conventional chemical wet etching, and the possibility of low-temperature growth. In this work, we fabricated an n-ZnO/SiO2/p-GaN light emitting diode with 394nm UV light emission. We compare samples with and without a SiO2 current blocking layer. With a SiO2 layer, EL spectrum shows a sharp emission peak at 394 nm. The 394 nm peak is attributed to the recombination of accumulated carriers between n-ZnO/SiO2 and p-GaN/SiO2 junctions. As for the sample without a SiO2 layer, only the 400-800 nm broad band is observed, which is due to Mg+ deep-level transition in the GaN and defects related recombination in the ZnO layers.
Analysis of the Inter-Channel Response in a MEMS 1xN2 Wavelength-Selective Switch (WSS) Professor Jui-che Tsai Graduate Institute of Photonics and Optoelectronics, National Taiwan University »OÆW¤j¾Ç¥ú¹q©Ò½²ºÍõ±Ð±Â Dynamic wavelength-selective switches (WSS) have been of great interest as they integrate wavelength demultiplexing, switching, and re-multiplexing functions in compact packages. They also enable management of optical networks at the wavelength level and are the building blocks of wavelength-selective crossconnets (WSXC). A wavelength-selective switch can be realized by various distinct techniques, such as the free-space MEMS (micro-electro-mechanical systems) optical system with a tilting-micromirror array, the hybrid PLC (planar lightwave circuit)-MEMS architecture, and liquid crystal-based modules. Until now, the maximum output port count for a free-space MEMS 1xN WSS with a one-dimensional (1D) collimator array is N = 4. The port count can be increased from N to N2 by using a two-dimensional (2D) collimator array in conjunction with a two-axis beam-steering mechanism. The two-axis beam steering is implemented by either two linear arrays of one-axis analog micromirrors with orthogonal scanning directions, or a monolithic two-axis MEMS scanner array. In our previous study of free-space MEMS 1xN2 WSS, we observed a large inter-channel response at a horizontal output port which is aligned with the input along the dispersion direction. The inter-channel response is undoubtedly undesirable for optical communication. It is preferable to suppress the inter-channel response, therefore maximizing the pass and stop bandwidths, allowing for channel misalignment due to laser drift from the ITU grid, and relaxing packaging requirements. We have developed a theoretical model based on Fourier optics and the power-coupling overlap integral. The inter-channel response in a MEMS 1xN2 WSS is investigated and it, according to the simulation results, depends significantly on the output port location and the radius of curvature of the micromirrors. A simple solution is then proposed to suppress the inter-channel response in a 1xN2 WSS. It can be achieved by rotating the 2D collimator array such that no output port is aligned with the input along the dispersion direction. With 20¢X rotation, 10-dB and 8.2-dB suppressions are demonstrated theoretically and experimentally, respectively, for a prototype system.
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