國立台灣大學光電工程學研究所
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2021/01/19
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2020/09/14
光電所與歐洲EMSP碩士雙學位計畫2021—申請說明會(2020年10月7日)
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  吳育任 教授兼副所長 美國密西根大學安娜堡分校電機博士 個人資料 | 著作列表 | 收授學生 | 網頁 | 實驗室
E-mail yrwu@ntu.edu.tw
辦公室 明達館 617室
辦公室時間 Tuesday and Thursday 11:00 to 12:00 am
電話 +886-2-33669647
網頁 http://yrwu-wk.ee.ntu.edu.tw
研究領域

  1. III-V wide bandgap semiconductor devices: We are focusing on device modeling of Al/GaN HFETs, which are applied in high power and high frequency area.

2. II-VI and III-V wide bandgap optoelectronic devices: Device modeling of quantum well/dot light emitting diodes, Analysis of carrier transport, emission and absorption properties.

3. Smart sensor FETs: We are interested in studying the junction properties of ferroelectric/semiconductor devices, which can be applied in memory, optical modular, waveguide, and sensor areas.

個人簡介 Prof. Yuh-Renn Wu received the Bachelor degree in Physics from National Taiwan University in 1998. He received his Master degree in Graduate Institute of Communication Engineering, National Taiwan University in 2000. After two years military service, he joined the Ph.D. program in Electrical Engineering and Computer science, University of Michigan, Ann Arbor in 2002 and obtained his Ph. D. degree at 2006. After being a short period of research fellow position in Michigan, he joined the Graduate Institute of Electro-Optical Engineering as an assistant professor in 2007. He is promoted as associate professor in 2011. Prof. Yuh-Renn Wu’s research area is focusing on the analysis and characterization of optical and semiconductor devices. During his study in the University of Michigan, Ann Arbor, He joined the Solid State Electronic Laboratory in Electrical Engineering and Computer Science department and worked in the analysis and modeling of high power electronic devices. He developed multi-dimensional Poisson, drift-diffusion and Schrodinger equation solver. He also developed Monte Carlo techniques in analysis of carrier transport and heat dissipation in high power GaN HFET devices. He also worked on the research of ferroelectric multi-functional devices and on developing the full bands k.p simulation programs for analysis of nitride quantum dot and quantum well band structures. His  current  research topics are  1.White light LED analysis and design. 2.Study of quantum well, quantum well, and quantum dot low deminsional systems. 3.High power nitride HFETs. 4. Ferroelectric material for high k and memory applications. 
重要著作

1.          Yi Chao Chow*, Changmin Lee, Matthew Wong, Yuh-Renn Wu, Shuji Nakamura, Steven P. DenBaars, John Bowers, James S. Speck, “Dependence of carrier escape lifetimes on quantum barrier thickness in InGaN/GaN multiple quantum well photodetectors”, Optics Express, In press, 2020. DOI: 10.1364/OE.399924

2.          Kai Shek Qwah*, Morteza Monavarian*, Guillaume Lheureux, Jianfeng Wang, Yuh-Renn Wu, and James S. Speck, “Theoretical and experimental investigation of vertical hole transport through unipolar AlGaN structures: Impacts of random alloy disorder”, Applied Physics Letter, In press, 2020. DOI: 10.1063/5.0006291

3.          Chun-Lin Yu, Chih-Hao Lin, and Yuh-Renn Wu*, “Analysis and optimization of GaN based Multi-channels FinFETs”, IEEE Transactions on nanotechnology, 19, pp439-445, June, 2020. DOI 10.1109/TNANO.2020.2998840.

4.          Chia-Yen Huang*, Walde Sebastian, Chia-Lung Tsai, Carsten Netzel, Hsueh-Hsing Liu, Sylvia Hagedorn, Yuh-Renn Wu, Yi-Keng Fu, and Markus Weyers, “Overcoming the excessive compressive strain in AlGaN epitaxy by introducing a high Si-doping in AlN templates” Jpn. J. Appl. Phys., 59, 070904, May, 2020. DOI: 10.35848/1347-4065/ab990a

5.          Jun-Yu Huang, Mei-Tan Wang, Guan-Yu Chen, Jung-Yu Li, Shih-Pu Chen, Jiun-Haw Lee, Tien-Lung Chiu, and Yuh-Renn Wu*, “Analysis of the Triplet Exciton Energy Transfer Mechanism at Heterojunction of Organic Light-Emitting Diode”, Journal of physics D, Applied Physics, 53, 345501, 2020. DOE:10.1088/1361-6463/ab8a94

6.          Cheyenne Lynsky*, Abdullah I. Alhassan, Guillaume Lheureux, Bastien Bonef, Steven P. DenBaars, Shuji Nakamura, Yuh-Renn Wu, Claude Weisbuch, and James S. Speck, “Barriers to carrier transport in multiple quantum well nitride-based c-plane green light emitting diodes” Phys. Rev. Materials 4, 054604, May, 2020, DOI:10.1103/PhysRevMaterials.4.054604

7.          Saulius Marcinkevičius*, Rinat Yapparov, Leah Y. Kuritzky, Yuh-Renn Wu, Shuji Nakamura, and James S. Speck, “Low-temperature carrier transport across InGaN multiple quantum wells: Evidence of ballistic hole transport”, Phys. Rev. B 101, 075305, (Feb), 2020. DOI: 10.1103/PhysRevB.101.075305

8.          Piotr Martyniuk*, Krystian Michalczewski, Tsung-Yin Tsai, Chao-Hsin Wu, and Yuh-Renn Wu, “A Thermoelectrically Cooled nBn Type‐II Superlattices InAs/InAsSb/B‐AlAsSb Mid‐Wave Infrared Detector”, Phys. Status Solidi A., on line available, 2020. DOI: 10.1002/pssa.201900522

9.          Tsung-Yin Tsai, Krystian Michalczewski, Piotr Martyniuk, Chao-Hsin Wu, and Yuh-Renn Wu*, “Application of localization landscape theory and the k · p model for direct modeling of carrier transport in a type II superlattice InAs/InAsSb photoconductor system”, Journal of Applied Physics 127, 033104 (2020); DOI: 10.1063/1.5131470

10.      Christian Andrew Robertson*,       Kai Shek Qwah, Yuh-Renn Wu, James S. Speck, “Modeling Dislocation-Related Leakage Currents in GaN p-n Diodes”, Journal of Applied Physics 126, 245705 (2019) DOI: 10.1063/1.5123394

11.      Chih-Chieh Chen*, Shiue-Yuan Shiau, Ming-Feng Wu, and Yuh-Renn Wu*, “Hybrid classical-quantum linear solver using Noisy Intermediate Scale Quantum machines”, Scientific Reports, Vol 9, p16251, 2019. DOI:10.1038/s41598-019-52275-6

12.      Jun-Yu Huang, En-Wen Chang, and Yuh-Renn Wu*, “Optimization of MAPbI3-Based Perovskite Solar Cell With Textured Surface”, IEEE Journal of Photovoltaics, 9, No.6, pp1686 - 1692, Nov. 2019. DOI: 10.1109/JPHOTOV.2019.2941170

13.      Krystian Michalczewski*, Piotr Martyniuk, Łukasz Kubiszyn, Chao-Hsin Wu, Yuh-Renn Wu, Jarek Jureńczyk, Antoni Rogalski, Jozef Piótrowski, “Demonstration of the Very Long Wavelength Infrared Type-II Superlattice InAs/InAsSb GaAs Immersed Photodetector Operating at Thermoelectric Cooling”, IEEE Electron Device Letters, 40, No. 9, 1396 – 1398, Sept. (2019), DOI: 10.1109/LED.2019.2930106

14.      P. Martyniuk*, K. Michalczewski, T.Y. Tsai, C.H. Wu and Y.R. Wu, “Theoretical modelling of XBn T2SLs InAs/InAsSb/B-AlAsSb mid-wave detector operating below thermoelectrical cooling”, Opto-Electronics Review, 27, 3, pp 275-281, (Sept.) 2019. DOI: 10.1016/j.opelre.2019.07.003

15.      Saulius Marcinkevičius*, Rinat Yapparov, Leah Y Kuritzky, Yuh-Renn Wu, Shuji Nakamura, Steven P DenBaars, James S Speck, “Interwell carrier transport in InGaN/(In) GaN multiple quantum wells”, Applied Physics Letters, 114 (15), 151103, 2019. April. DOI: 10.1063/1.5092585

16.      Li-Cheng Chang, Jhih-Hao Lin, Cheng-Jia Dai, Ming Yang, Yi-Hong Jiang, Yuh-Renn Wu, and Chao-Hsin Wu*, ”Systematic investigation of the thresholdvoltage modulation of AlGaN/GaN Schottky-gate Fin-HEMTs”, J. Appl. Phys. 125, 094502, March (2019); DOI:10.1063/1.5085275

17.      Hung-Hsiang Chen, James S Speck, Claude Weisbuch, Yuh-Renn Wu*, “Three dimensional simulation on the transport and quantum efficiency of UVC-LEDs with random alloy fluctuations”, Applied Physics Letters, 113, 153504, 2018, DOI: 10.1063/1.5051081

18.      W. Hahn, J-M Lentali, P Polovodov, N Young, S Nakamura, JS Speck, C Weisbuch, M Filoche, Y-R Wu, M Piccardo, F Maroun, L Martinelli, Y Lassailly, J Peretti*, “Evidence of nanoscale Anderson localization induced by intrinsic compositional disorder in InGaN/GaN quantum wells by scanning tunneling luminescence spectroscopy, Physical Review B 98 (4), 045305, 2018, DOI: 10.1103/PhysRevB.98.045305.

19.      Chia-Yen Huang*, Tzu-Ying Tai, Jing-Jie Lin, Tsu-Chi Chang, Che-Yu Liu, Tien-Chang Lu, Yuh-Renn Wu, Hao-Chung Kuo, “Mode-Hopping Phenomena in the InGaN-Based Core–Shell Nanorod Array Collective Lasing”, ACS Photonics, 5, pp 2724–2729, 2018. DOI: 10.1021/acsphotonics.8b00471.

20.      Han‐Wei Hsiao and Yuh‐Renn Wu*, “3D Self‐Consistent Quantum Transport Simulation for GaAs Gate‐All‐Around Nanowire Field‐Effect Transistor with Elastic and Inelastic Scattering Effects”, physica status solidi (a), 1800524, 2018. DOI: 10.1002/pssa.201800524

21.      Wen-Yen Chang, Yang Kuo, Yu-Feng Yao, CC Yang, Yuh-Renn Wu, and Yean-Woei Kiang*, “Different surface plasmon coupling behaviors of a surface Al nanoparticle between TE and TM polarizations in a deep-UV light-emitting diode” Optics Express 26 (7), 8340-8355, 2018. DOI:10.1364/OE.26.008340

22.      Chia-Ying Su, Meng-Che Tsai, Keng-Ping Chou, Hsin-Chun Chiang, Huang-Hui Lin, Ming-Yen Su, Yuh-Renn Wu, Yean-Woei Kiang, CC Yang*,” Method for enhancing the favored transverse-electric-polarized emission of an AlGaN deep-ultraviolet quantum well” Optics express 25 (22), 26365-26377, 2017. DOI :10.1364/OE.25.02636

23.      Te-Jen Kung, Jun-Yu Huang, Jau-Jiun Huang, Snow H. Tseng, Man-Kit Leung, Tien-Lung Chiu, Jiun-Haw Lee, and Yuh-Renn Wu*, “Modeling of carrier transport in organic light emitting diode with random dopant effects by two-dimensional simulation”, Optics Express, 25, (21), pp. 25492-25503, 2017, DOI: 10.1364/OE.25.025492

24.      Shuo-Fan Chen and  Yuh-Renn Wu*, “A design of intermediate band solar cell for photon ratchet with multi-layer MoS2 nanoribbons Appl. Phys. Lett. 110, 201109 (2017) DOI: 10.1063/1.4983721

25.      C. Y. Su; C. G. Tu; W. H. Liu; C. H. Lin; Y. F. Yao; H. T. Chen; Y. R. Wu; Y. W. Kiang; C. C. Yang*, "Enhancing the Hole-Injection Efficiency of a Light-Emitting Diode by Increasing Mg Doping in the p-AlGaN Electron-Blocking Layer," in IEEE Transactions on Electron Devices , 64 (8), 3226-3233. 2017 DOI: 10.1109/TED.2017.2711023

26.      Chi-Kang Li, Marco Piccardo, Li-Shuo Lu, Svitlana Mayboroda, Lucio Martinelli, Claude Weisbuch, Marcel Filoche, Yuh-Renn WuLocalization landscape theory of disorder in semiconductors III: Application to transport and radiative recombination in light emitting diodes.”, Phys. Rev. B, 95, 144206 , April, 2017. DOI: 10.1103/PhysRevB.95.144206

27.      Marco Piccardo, Chi-Kang Li, Yuh-Renn Wu, James S. Speck, Bastien Bonef,  Bob Farrell, Marcel Filoche, Lucio Martinelli, Jacques Peretti, and Claude Weisbuch, “Localization landscape theory of disorder in semiconductors II: Urbach tails of disordered quantum well layers”, Phys. Rev. B, 95, 144205, April, 2017. DOI: 10.1103/PhysRevB.95.144205

28.      Marcel Filoche, Marco Piccardo, Yuh-Renn Wu, Chi-Kang Li, Claude Weisbuch, and Svitlana Mayboroda, “ Localization landscape theory of disorder in semiconductors I: Theory and modeling”, Phys. Rev. B, 95, 144204, April, 2017. DOI: 10.1103/PhysRevB.95.144204

29.      Networking hole and electron hopping paths by Y-shaped host molecules: promoting blue phosphorescent organic light emitting diodes’’, J. Mater. Chem. C, 5, 3600-3608, 2017. DOI: 10.1039/C6TC05538A

30.      Heng Li, Hui-Yu Cheng, Wei-Liang Chen, Yi-Hsin Huang, Chi-Kang Li, Chiao-Yun Chang, Yuh-Renn Wu, Tien-Chang Lu*, and Yu-Ming Chang*, “Three dimensional characterization of GaN-based light emitting diode grown on patterned sapphire substrate by confocal Raman and photoluminescence spectromicroscopy”, Scientific Reports 7,  45519 (2017)  DOI:10.1038/srep45519.

31.      Shin-Yi Ho, Chun-Hsun Lee, An-Jye Tzou, Hao-Chung Kuo, Yuh-Renn Wu, and JianJang Huang, "Suppression of Current Collapse in Enhancement Mode GaN-Based HEMTs Using an AlGaN/GaN/AlGaN Double Heterostructure," in IEEE Transactions on Electron Devices, vol. 64, no. 4, pp. 1505-1510, April 2017. DOI: 10.1109/TED.2017.2657683

32.      Chih-Hsien Cheng, Tzu-Wei Huang, Chung-Lun Wu, Mu Ku Chen, Cheng Hung Chu, Yuh-Renn Wu, Min-Hsiung Shih, Chao-Kuei Lee, Hao-Chung Kuo, Din-Ping Tsai, and Gong-Ru Lin*, “Transferring the Bendable Substrateless GaN LED Grown on Thin C-rich SiC Buffer Layer to Flexible Dielectric and Metallic Plates”, J. Mater. Chem.C, 5, 607-617, (2017). DOI: 10.1039/C6TC04318F

33.      Shuo-Fan Chen, Yuh-Renn Wu*, “Electronic Properties of MoS2 Nanoribbon under Strain Using Tight Binding Method”, Physica Status Solidi B: Basic Solid State Physics, 1600565 (2017). DOI 10.1002/pssb.201600565

34.      David Browne*, Micha Fireman, Baishakhi Mazumder, Leah Kuritzky, Yuh-Renn Wu, and James Speck, “Vertical Transport through AlGaN Barriers in Heterostructures Grown by Ammonia Molecular Beam Epitaxy and Metalorganic Chemical Vapor Deposition”, Semicond. Sci. Technol., 32, p025010, (2017). DOI:10.1088/1361-6641/32/2/025010

35.      H. T. Chen; C. Y. Su; C. G. Tu; Y. F. Yao; C. H. Lin; Y. R. Wu; Y. W. Kiang; C. C. Yang*, “Combining High Hole Concentration in p-GaN and High Mobility in u-GaN for High p-type Conductivity in a p-GaN/u-GaN Alternating-layer Nanostructure”, IEEE Transactions on Electron Devices, 64 (1), 115-120, 2017. DOI: 10.1109/TED.2016.2631148

36.      Kuan-Ying Ho, Chi-Kang Li, Hong-Jhang Syu, Yi Lai, Ching-Fuh Lin and Yuh-Renn Wu*, “Analysis of the PEDOT:PSS/Si nanowire hybrid solar cell with a tail state model”, J. Appl. Phys., 120, 215501, (2016). DOI:10.1063/1.4970827

37.      Chao-Wei Wu and Yuh-Renn Wu*,“Optimization of thermoelectric properties for rough nano-ridge GaAs/AlAs superlattice structure”, AIP Advances 6, 115201, 2016. DOI: 10.1063/1.4967202

38.      Chi-Kang Li, Chen-Kuo Wu, Chung-Cheng Hsu, Li-Shuo Lu, Heng Li, Tien-Chang Lu, and Yuh-Renn Wu*, “3D numerical modeling of the carrier transport and radiative efficiency for InGaN/GaN light emitting diodes with V-shaped pits”, AIP Advance, 6, 055208, 2016. DOI: 10.1063/1.4950771

39.      Xinhui Chen, Kuan-Ying Ho, and Yuh-Renn Wu*, Modeling and Optimization of p-AlGaN super lattice structure as the p-contact and transparent layer”, Opt. Express 23, 32367-32376 (2015). DOI:10.1364/OE.23.032367

40.      David A. Browne, Baishakhi Mazumder, Yuh-Renn Wu, and James S. Speck “Electron Transport in Unipolar InGaN/GaN Multiple Quantum Well Structures Grown by NH3 Molecular Beam Epitaxy”, J. Appl. Phys., 117, 185703, 2015. SCI papers. DOI: 10.1063/1.4919750

41.      Chih-Chien Pan*, Qimin Yan, Houqiang Fu, Yuji Zhao, Yuh-Renn Wu, Chris Van de Walle, Shuji Nakamura, Steven P. DenBaars, “High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier” Electronics Letters, vol. 51, no. 15, pp. 1187-1189, 2015. SCI papers. DOI: 10.1049/el.2015.1647.

42.      Chen-Kuo Wu, Chi-Kang Li, and Yuh-Renn Wu*, “Percolation transport study in nitride based LEDby considering the random alloy fluctuation”, Journal of Computational Electronics, 9 pages, 14, pp416-424, 2015. , SCI papers.  DOI 10.1007/s10825-015-0688-y .

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