國立台灣大學光電工程學研究所
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本所成員-教師
 
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  吳育任 美國密西根大學安娜堡分校電機博士 個人資料 | 著作列表 | 收授學生 | 網頁 | 實驗室
E-mail yrwu@cc.ee.ntu.edu.tw
辦公室 明達館 617室
辦公室時間 Monday and Wednesday 11:00 to 12:00 am
電話 +886-2-33669647
網頁 http://yrwu-wk.ee.ntu.edu.tw
研究領域

  1. III-V wide bandgap semiconductor devices: We are focusing on device modeling of Al/GaN HFETs, which are applied in high power and high frequency area.

2. II-VI and III-V wide bandgap optoelectronic devices: Device modeling of quantum well/dot light emitting diodes, Analysis of carrier transport, emission and absorption properties.

3. Smart sensor FETs: We are interested in studying the junction properties of ferroelectric/semiconductor devices, which can be applied in memory, optical modular, waveguide, and sensor areas.

個人簡介 Prof. Yuh-Renn Wu received the Bachelor degree in Physics from National Taiwan University in 1998. He received his Master degree in Graduate Institute of Communication Engineering, National Taiwan University in 2000. After two years military service, he joined the Ph.D. program in Electrical Engineering and Computer science, University of Michigan, Ann Arbor in 2002 and obtained his Ph. D. degree at 2006. After being a short period of research fellow position in Michigan, he joined the Graduate Institute of Electro-Optical Engineering as an assistant professor in 2007. Prof. Yuh-Renn Wu’s research area is focusing on the analysis and characterization of optical and semiconductor devices. During his study in the University of Michigan, Ann Arbor, He joined the Solid State Electronic Laboratory in Electrical Engineering and Computer Science department and worked in the analysis and modeling of high power electronic devices. He developed multi-dimensional Poisson, drift-diffusion and Schrodinger equation solver. He also developed Monte Carlo techniques in analysis of carrier transport and heat dissipation in high power GaN HFET devices. He also worked on the research of ferroelectric multi-functional devices and on developing the full bands k.p simulation programs for analysis of nitride quantum dot and quantum well band structures. His  current  research topics are  1.White light LED analysis and design. 2.Study of quantum well, quantum well, and quantum dot low deminsional systems. 3.High power nitride HFETs. 4. Ferroelectric material for high k and memory applications. 
重要著作

1.          Yuh-Renn Wu and Cheng-Yu Chang, “Etching Depth Dependence of Emission Properties from InGaN/GaN Light Emitting Diodes with Nanohole Arrays: Analysis of Strain Relaxation and Surface States” submitted to Appl. Phys. A.

2.          Yuh-Renn Wu, Chinghua Chiu, Cheng-Yu Chang, Peichen Yu, and Hao-Chung Kuo, “Size-Dependent Strain Relaxation and Emission Characteristics of InGaN/GaN Nanorod Light Emitting Diodes”, accepted by IEEE Journal of Selected Topics in Quantum Electronics.

3.          Yuh-Renn Wu, Yih-Yin Lin, and Jasprit Singh, "Electronic and Optical Properties of InGaN Quantum Dot based Emitters for Solid State Lighting", Journal of applied physics, 105, 013117, 2009. DOI:10.1063/1.3065274 (SCI)

4.          Yuh-Renn Wu, Peichen Yu, C.H. Chiu, Cheng-Yu Chang , and H.C. Kuo, “Analysis of Strain Relaxation and Emission Spectrum of A Free-Standing GaN-based Nanopillar”, proceeding of SPIE, Vol 7058, p70580G, 2008. (SCI)

5.          Peichen Yu , C. H. Chiu , Yuh-Renn Wu, H. H. Yen, J. R. Chen, C. C. Kao, Han-Wei Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, " Strain Relaxation Induced Micro-Photoluminescence Characteristics of a Single InGaN-based Nanopillar Fabricated by Focused Ion Beam Milling " Appl. Phys. Lett., vol 93, p081110, 2008(SCI).

6.          J. W. Chung, X. Zhao, Y.-R. Wu, J. Singh, and T. Palacios “Effect of image charges in the drain delay of AlGaN/GaN high electron mobility transistors”, Appl. Phys. Lett., vol 92, P093502, 2008. (SCI)

7.          C. Y. Liu, A. Datta, N. W. Liu, Y. R. Wu, H. H. Wang, T. H. Chuang, and Y. L. Wang “Enhanced growth of anodic alumina nanochannels on Ga-ion pre-irradiated aluminum” J. Vac. Sci. Technol. B, V26, pp651-654, 2008. (SCI)

8.        Yuh-Renn Wu, John M. Hinckley, and Jasprit Singh  “Extraction of Transport Dynamics in AlGaN/GaN HFETs”, Journal of Electronic Materials, Vol.37, No. 5, pp578-584, 2008. (SCI)
9.        Yuh-Renn Wu, Jasprit Singh “Transient Study of Self-heating Effects in AlGaN/GaN HFETs: Consequence of Carrier Velocities, Temperature, and Device Performance” J. Appl. Phys., vol. 101, p113712, 2007 (SCI)

10.      S. Y. Yang, Q. Zhan, P. L. Yang, M. P. Cruz, Y. H. Chu, R. Ramesh, Y.-R. Wu, J. Singh, W. Tian, and D. G. Schlom, “Capacitance-voltage characteristics of BiFeO3/SrTiO3/GaN heteroepitaxial structures,” Appl. Phys. Lett., vol. 91, p022909, July, 2007.(SCI)

11.      Yuh-Renn Wu, Madhusudan Singh, and Jasprit Singh," Device Scaling Physics and Channel Velocities in AlGaN-GaN HFETs: Velocities and Effective Gate Length", IEEE Trans Electron Dev, 53, pp. 588-593, April, 2006. (SCI)

12.      Yuh-Renn Wu, Madhusudan Singh, and Jasprit Singh," Sources of Transconductance Collapse in III-V nitrides - Consequences of velocity-field relations and source-gate design" , IEEE Trans Electron Dev, vol. 52, no. 6, pp.1048–1054, June, 2005. (SCI)

13.      Madhusudan Singh, Yuh-Renn Wu and Jasprit Singh," Velocity Overshoot Effects and Scaling Issues in III-V Nitrides ", IEEE Trans Electron Dev, 52, 3, pp 311-316, 2005. (SCI)

14.      Yuh-Renn Wu and Jasprit Singh," Polar Heterostructure for Multi-function Devices: Theoretical Studies", IEEE Trans Electron Dev, 52, 2,284-293, 2005. (SCI)

15.      Yuh-Renn Wu and Jasprit Singh, "Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors". Appl. Phys. Lett., 85, 2004, pp 1223-1225. (SCI)

16.      Madhusudan Singh, Yuh-Renn Wu and Jasprit Singh, "Examination of LiNbO3 / nitride heterostructures". Solid-State Electron, 47, 12, 2003, pp 2155-2159. (SCI)

17.      Yuh-Renn Wu, Madhusudan Singh and Jasprit Singh. "Gate leakage suppression and contact engineering in nitride heterostructures", J. Appl. Phys., 94, 5826-5831, 2003. (SCI)

18.      A. Datta, Yuh-Renn Wu, Y. L. Wang, “Real-time Observation of Ripple structure formation on a diamond surface under focused ion-beam bombardment”, Physical Review B, 63, 125407, 2001.

19.      A. Datta, Yuh-Renn Wu, Y. L. Wang, “Gas-assisted focused-ion-beam lithography of a diamond (100) surface”, Appl. Phys. Lett. 75, pp2677, 1999. (SCI)
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