國立台灣大學光電工程學研究所
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2017/09/19
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2017/09/12
106學年第1學期博士學位考試申請、口試安排及相關作業注意事項
本所成員-教師
 
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  吳育任 美國密西根大學安娜堡分校電機博士 個人資料 | 著作列表 | 收授學生 | 網頁 | 實驗室
E-mail yrwu@ntu.edu.tw
辦公室 明達館 617室
辦公室時間 Monday and Wednesday 11:00 to 12:00 am
電話 +886-2-33669647
網頁 http://yrwu-wk.ee.ntu.edu.tw
研究領域

  1. III-V wide bandgap semiconductor devices: We are focusing on device modeling of Al/GaN HFETs, which are applied in high power and high frequency area.

2. II-VI and III-V wide bandgap optoelectronic devices: Device modeling of quantum well/dot light emitting diodes, Analysis of carrier transport, emission and absorption properties.

3. Smart sensor FETs: We are interested in studying the junction properties of ferroelectric/semiconductor devices, which can be applied in memory, optical modular, waveguide, and sensor areas.

個人簡介 Prof. Yuh-Renn Wu received the Bachelor degree in Physics from National Taiwan University in 1998. He received his Master degree in Graduate Institute of Communication Engineering, National Taiwan University in 2000. After two years military service, he joined the Ph.D. program in Electrical Engineering and Computer science, University of Michigan, Ann Arbor in 2002 and obtained his Ph. D. degree at 2006. After being a short period of research fellow position in Michigan, he joined the Graduate Institute of Electro-Optical Engineering as an assistant professor in 2007. He is promoted as associate professor in 2011. Prof. Yuh-Renn Wu’s research area is focusing on the analysis and characterization of optical and semiconductor devices. During his study in the University of Michigan, Ann Arbor, He joined the Solid State Electronic Laboratory in Electrical Engineering and Computer Science department and worked in the analysis and modeling of high power electronic devices. He developed multi-dimensional Poisson, drift-diffusion and Schrodinger equation solver. He also developed Monte Carlo techniques in analysis of carrier transport and heat dissipation in high power GaN HFET devices. He also worked on the research of ferroelectric multi-functional devices and on developing the full bands k.p simulation programs for analysis of nitride quantum dot and quantum well band structures. His  current  research topics are  1.White light LED analysis and design. 2.Study of quantum well, quantum well, and quantum dot low deminsional systems. 3.High power nitride HFETs. 4. Ferroelectric material for high k and memory applications. 
重要著作

1.          Xinhui Chen, Kuan-Ying Ho, and Yuh-Renn Wu*, Modeling and Optimization of p-AlGaN super lattice structure as the p-contact and transparent layer”, Opt. Express 23, 32367-32376 (2015). DOI:10.1364/OE.23.032367

2.          David A. Browne, Baishakhi Mazumder, Yuh-Renn Wu, and James S. Speck “Electron Transport in Unipolar InGaN/GaN Multiple Quantum Well Structures Grown by NH3 Molecular Beam Epitaxy”, J. Appl. Phys., 117, 185703, 2015. SCI papers. DOI: 10.1063/1.4919750

3.          Chih-Chien Pan*, Qimin Yan, Houqiang Fu, Yuji Zhao, Yuh-Renn Wu, Chris Van de Walle, Shuji Nakamura, Steven P. DenBaars, “High optical power and low-efficiency droop blue light-emitting diodes using compositionally step-graded InGaN barrier” Electronics Letters, vol. 51, no. 15, pp. 1187-1189, 2015. SCI papers. DOI: 10.1049/el.2015.1647.

4.          Chen-Kuo Wu, Chi-Kang Li, and Yuh-Renn Wu*, “Percolation transport study in nitride based LEDby considering the random alloy fluctuation”, Journal of Computational Electronics, 9 pages, 14, pp416-424, 2015. , SCI papers.  DOI 10.1007/s10825-015-0688-y .

5.          Finella Lee, Liang-Yu Su, Chih-Hao Wang, Yuh-Renn Wu, and Jianjang Huang*, “Impact of Gate Metal on the Performance of p-GaN/AlGaN/GaN High Electron Mobility Transistors” IEEE Electron Device Letters, 36, pp232-234, 2015. (March), SCI papers.  DOI: 10.1109/LED.2015.2395454

6.          H.H.Wang, J. S. Tian, C. Y. Chen, H. H. Huang, Y. C. Yeh, P. Y. Deng, L. Chang ; Y. H. Chu, Y. R. Wu, J. H. He*, "The Effect of Tensile Strain on Optical Anisotropy and Exciton of m-Plane ZnO," in IEEE Photonics Journal, vol. 7, no. 2, pp. 1-8, April 2015. DOI: 10.1109/JPHOT.2015.2415672

7.          Tsung-Jui Yang, Ravi Shivaraman, James S. Speck, and Yuh-Renn Wu*, “The Influence of Random Indium Alloy fluctuations in Indium Gallium Nitride Quantum Wells on the Device Behavior”,  J. Appl. Phys, 116, 113104, 2014. DOI: 10.1063/1.4896103

8.          Chao-Wei Wu and Yuh-Renn Wu*, “Thermoelectric characteristic of the rough InN/GaN core-shell nanowires”, J. Appl. Phys. 16, 103707 , 2014  DOI:10.1063/1.4894510

9.          Hui-Hsin Hsiao, Hung-Chun Chang, and Yuh-Renn Wu*, “Design of Anti-ring Back Reflectors for Thin-Film Solar Cells Based on Three-Dimensional Optical and Electrical Modeling”, Appl. Phys. Lett., 105, 061108 2014. Doi:10.1063/1.4893025

10.      W. C. Lai*, M. H. Ma, B. K. Lin, B. H. Hsieh, Y. R. Wu, and J. K. Sheu, “Photoelectrochemical hydrogen generation with linear gradient Al composition dodecagon faceted AlGaN/n-GaN electrode” Optics Express, 22, S7, pp. A1853-A1861, 2014. DOI: 10.1364/OE.22.0A1853  

11.      K. Y. Lai, G. J. Lin, Yuh-Renn Wu, Meng-Lun Tsai, and Jr-Hau He*, "Efficiency dip observed with InGaN-based multiple quantum well solar cells” Optics Express, 22, S7, pp. A1753-A1760, 2014. DOI: 10.1364/OE.22.0A1753

12.      Hsiang-Wei Li, Yu-Feng Yin, Chen-Yu Chang, Chen-Hung Tsai, Yen-Hsiang Hsu, Da-Wei Lin, Yuh-Renn Wu, Hao-Chung Kuo, and Jian Jang Huang, "Mechanisms of the Asymmetric Light Output Enhancements in a-Plane GaN Light-Emitting Diodes With Photonic Crystals", IEEE Journal of Quantum Electronics, 50,12, pp951-956, 2014. DOI 10.1109/JQE.2014.2362552

13.      Yuji Zhao, Robert M. Farrell, Yuh-Renn Wu, and James S. Speck*, “Valence band states and polarized optical emission from nonpolar and semipolar III-nitride quantum well optoelectronic devices”, Jpn. J. Appl. Phys. –Selected Topics in Applied Physics , invited review paper, 53, 100206 (2014), 2014 DOI:10.7567/JJAP.53.100206

14.      Yen Chou, Hsiang-Wei Li, Yu-Feng Yin, Yu-Ting Wang, Yen-Chen Lin, Da-Wei Lin, Yuh-Renn Wu, Hao-Chung Kuo, and Jian Jang Huang, “Polarization ratio enhancement of a-plane GaN light emitting diodes by asymmetric two-dimensional photonic crystals” J. Appl. Phys., 115, 193107, 2014. DOI 10.1063/1.4876655

15.      Erin C. H. Kyle, Stephen W. Kaun, Peter G. Burke, Feng Wu, Yuh-Renn Wu, and James S. Speck, “High-electron-mobility GaN grown on free standing GaN templates by ammonia-based molecular beam epitaxy” J. Appl. Phys., 115, 193702, 2014. DOI:10.1063/1.4874735

16.      Chun-Yao Lee, Chun-Ming Yeh, Yung-Tsung Liu, Chia-Ming Fan, Chien-Fu Huang, and Yuh-Renn Wu*, “The optimization study of textured a-Si:H solar cells”, J. Renewable and Sustainable Energy 6, 023111 2014. DOI: 10.1063/1.4870993

17.      Chi-Kang Li, Maarten Rosmeulen, Eddy Simoen, and Yuh-Renn Wu*, “Study on the Optimization for Current Spreading Effect of Lateral GaN/InGaN LEDs”, IEEE Trans Electron Dev., 61, pp511-517, 2014. DOI: 10.1109/TED.2013.2294534

18.      Yuji Zhao, Feng Wu, Tsung-Jui Yang, Yuh-Renn Wu, Shuji Nakamura, and James S. Speck, “Atomic-scale nanofacet structure in semipolar (20-2-1) and (20-21) InGaN single quantum wells”, Appl. Phys. Express, 7, p025503. 2014. DOI: 10.7567/APEX.7.025503

19.      Jheng-Han Lee, Zong-Ming Wu, Yu-Min Liao, Yuh-Renn Wu, Shih-Yen Lin, and Si-Chen Lee*, “The Operation Principle of the Well in Quantum Dot stack Infrared Photodetector” , J. Appl. Phys., 14, 244504, 2013. DOI 10.1063/1.4849875

20.      Chi-Kang Li, Po-Chun Yeh, Jeng-Wei Yu, Lung-Han Peng, and Yuh-Renn Wu*, “Scaling Performance of Ga2O3/GaN Nanowire Field Effect Transistor”, Journal of Applied Physics, 114, 163706, 2013. DOI: 10.1063/1.4827190

21.      J. Pal, M. A. Migliorato, C.-K. Li, Y.-R. Wu, B. G. Crutchley, I. P. Marko, and S. J. Sweeney, “Enhancement of Efficiency of InGaN-based LEDs through Strain and Piezoelectric Field Management” Journal of Applied Physics, 114, 073104, 2013. DOI: 10.1063/1.4818794

22.      Kai-Lun Chi, Shu-Ting Yeh, Yu-Hsiang Yeh, Kun-Yan Lin, Jin-Wei Shi*, Yuh-Renn Wu*, M. L. Lee, and J.-K. Sheu, “GaN-Based Dual Color Light-Emitting-Diodes with P-Type Insertion Layer for Controlling the Ratio of Two-Color Intensities”, IEEE Trans Electron Dev., 60, pp2821-2826, 2013. DOI: 10.1109/TED.2013.2272803

23.      D. N. Nath, Z. C. Yang, C.-Y. Lee, P.S. Park, Y.-R Wu, and S. Rajan, “Unipolar Vertical Transport in GaN/AlGaN/GaN Heterostructures”Applied Physics Letter, 103, 022102, 2013. DOI:  10.1063/1.4813309

24.      Yoshinobu Kawaguchi, Chia-Yen Huang, Yuh-Renn Wu, Yuji Zhao, Steven P. DenBaars, and Shuji Nakamura, “Semipolar (20-21) Single-Quantum-Well Red Light-Emitting Diodes with a Low Forward Voltage “, Jpn. J. Appl. Phys,  52, p08JC08, 2013.  DOI: 10.7567/JJAP.52.08JC08

25.      Yang Kuo, Wen-Yen Chang, Horng-Shyang Chen, Yuh-Renn Wu, C. C. Yang, and Yean-Woei Kiang*, “Surface-plasmon-coupled emission enhancement of a quantum well with a metal nanoparticle embedded in a light-emitting diode,” J. Opt. Soc. Am. B, 30, 10, 2599-2606, Oct. 2013. DOI: 10.1364/JOSAB.30.002599

26.      Chin-Yi Chen and Yuh-Renn Wu*,Scaling Issues in Trigate GaN Nanowire Transistors”, J. Appl. Phys., 113, p214501, 2013. DOI: 10.1063/1.4808241

27.      Chi-Kang Li, Hung-Chih Yang, Ta-Cheng Hsu, Yu-Jiun Shen, Ai-Sen Liu, and Yuh-Renn Wu*, “Three Dimensional Numerical Study on the Efficiency of a Core-shell InGaN/GaN Multiple Quantum Well Nanowire LED”, J. Appl. Phys., 113, 183104, 2013. DOI 10.1063/1.4804415

28.      Hsun-Wen Wang, Pei-Chen Yu*, Yuh-Renn Wu*, Hao-Chung Kuo, and Shiuan-Huei Lin, “Projected efficiency of polarization matched p-InxGa1-xN/i-InyGa1-yN/n-GaN double heterojunction solar cells”, IEEE Journal of photovoltaic, 3, pp985-990, 2013, DOI 10.1109/JPHOTOV.2013.2252953

29.      Liang-Yi Chen, Chi-Kang Li, Jin-Yi Tan, Li-Chuan Huang, Yuh-Renn Wu and JianJang Huang*, “On the Efficiency Decrease of the GaN Light-Emitting Nanorod Arrays”, IEEE Journal of Quantum Electronics, 49, 2, pp224-231, 2013. DOI: 10.1109/JQE.2013.2237885.

30.      Pradeep Senanayake*, Chung-Hong Hung, Alan Farrell, David A. Ramirez,  Joshua Shapiro, Chi-Kang Li, Yuh-Renn Wu, Majeed M. Hayat, and Diana L. Huffaker, “Thin 3D Multiplication Regions in Plasmonically Enhanced Nanopillar Avalanche Detectors”, Nano letters, 12 (12), pp 6448–6452, 2012. DOI:10.1021/nl303837y

31.      Jordan Reed Lang, Nathan G. Young, Robert M. Farrell, Yuh-Renn Wu, and James S. Speck, “Carrier escape mechanism dependence on barrier thickness and temperature in InGaN quantum well solar cells”, Applied Physics Letter, 101, p181105, 2012. DOI: 10.1063/1.4765068

32.      Jeng-Wei Yu, Po-Chun Yeh, Sung-Li Wang, Yuh-Renn Wu, Ming-Hua Mao, Hao-Hsiung Lin, and Lung-Han Peng*, "Short channel effects on gallium nitride/gallium oxide nanowire transistors" Applied Physics Letter, 101, p183501, 2012. DOI:10.1063/1.4764554

33.      Ting-Gang Chen, Peichen Yu*, Shih-Wei Chen, Feng-Yu Chang, Bo-Yu Huang, Yu-Chih Cheng1, Jui-Chung Hsiao2, Chi-Kang Li and Yuh-Renn Wu, "Characteristics of large-scale nanohole arrays for thin-silicon photovoltaics",  Prog. Photovolt: Res., Published on line,  (2012)  DOI: 10.1002/pip.2291

34.      Ingrid L. Koslow*, Matthew T. Hardy, Po Shan Hsu, Po-Yuan Dang, Feng Wu, Alexey Romanov,  Yuh-Renn Wu, Erin C. Young, Shuji Nakamura, James S. Speck, and Steven P. DenBaars, “(11-22) Long Wavelength Light Emitting Diodes Grown on Stress Relaxed InGaN Buffer Layers”, Applied Physics Letter, 101, 121106 (2012). DOI: 10.1063/1.4753949

35.      Yuh-Renn Wu*, Ravi Shivaraman, Kuang-Chung Wang, and James S. Speck, “Analyzing Physical Properties of InGaN Multiple Quantum Well LEDs from Nano Scale Structure”, Applied Physics Letter, 101, 083505, 2012. DOI:10.1063/1.4747532.

36.      Chang-Pei Wang and Yuh-Renn Wu*, “Study of Optical Anisotropy in Nonpolar and Semipolar AlGaN Quantum Well Deep Ultraviolet Light Emission Diode” Journal of Applied Physics, 112, 033104, 2012. DOI: 10.1063/1.47420502012, JAP Aug Top 20 most downloaded in this month

37.      Yoshinobu Kawaguchi*, Chia-Yen Huang, Yuh-Renn Wu, Qimin Yan, Chih-Chien Pan, Yuji Zhao, Shinichi Tanaka, Kenji Fujito, Daniel Feezell, Chris G. Van de Walle, Steven P. DenBaars, and Shuji Nakamur, “Influence of polarity on Carrier Transports of Semipolar Multiple-Quantum-Well () and () Light-Emitting Diodes”, Appl. Phys. Lett. 100, 231110 (2012) DOI:10.1063/1.4726106 (2012, June, Top most downloaded,  “Editor’s Picks of 2012.)

38.      Chi-Kang Li and Yuh-Renn Wu*,  “Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs” IEEE Trans Electron Dev., 59 (2), pp400-407, (2012). DOI:10.1109/TED.2011.2176132 (2013, 2014 JCR highly cited papers (top 1%) of this journal)

39.      H.-A. Chin, I-C. Cheng*, C.-K. Li, Y.-R. Wu, J. Z. Chen, W.-S. Lu, W.-L. Lee, “The electrical properties of modulation-doped rf-sputtered polycrystalline MgZnO/ZnO heterostructures”, Journal of Physics D: Applied Physic, 44, 455101, (2011). DOI:10.1088/0022-3727/44/45/455101

40.      Jeng-Wei Yu , Chi-Kang Li , C. Y. Chen , Yuh-Renn Wu , Li-Jen Chou, and Lung-Han Peng*, “Transport properties of gallium nitride nanowire metal-oxide-semiconductor transistor”, Appl. Phys. Lett, 99, 152108, (2011). DOI:10.1063/1.3651332

41.      Liang-Yi Chen, Hung-Hsun Huang, Chun-Hsiang Chang, Ying-Yuan Huang, Yuh-Renn Wu, and JianJang Huang*, "Investigation of the strain induced optical transition energy shift of the GaN nanorod light emitting diode arrays", Optics Express, 19,  pp. A900-A907, (2011). DOI:10.1364/OE.19.00A900

42.      Hung-Hsun Huang, I-Lin Lu and Yuh-Renn Wu*,"Study of thermoelectric properties of indium nitride nanowire", Physica status solidi (a), 208, pp1562-2565, 2011. (SCI)  DOI 10.1002/pssa.201001047

43.      I-Lin Lu, Yuh-Renn Wu*, and Jasprit Singh, "Study of Carrier Dynamics and Radiative Efficiency in InGaN/GaN LEDs with Monte Carlo Method" Physica status solidi (c), 8, pp2393-2395, 2011, DOI: 10.1002/pssc.201001054

44.      Yu-Hsuan Sun, Yun-Wei Cheng, Szu-Chieh Wang, Ying-Yuan Huang, Chun-Hsiang Chang, Sheng-Chieh Yang, Liang-Yi Chen, Min-Yung Ke, Chi-Kang Li, Yuh-Renn Wu, and JianJang Huang*, “Optical Properties of the Partially Strain Relaxed InGaN/GaN Light-Emitting Diodes Induced by P-type GaN Surface Texturing”, Electron Dev. Lett., 32, pp182-184, 2011.(SCI) DOI: 10.1109/LED.2010.2093503

45.      I-Lin Lu, Yuh-Renn Wu*, and Jasprit Singh, "A Study of the Role of Dislocation Density, Indium Composition on the Radiative Efficiency in InGaN/GaN Polar and Nonpolar LEDs using Drift-diffusion Coupled with a Monte Carlo Method", Journal of Applied Physics, 108, 124508, 2010. (SCI) DOI: 10.1063/1.3524544

46.      Po-Yuan Dang and Yuh-Renn Wu*, "Optical Polarization Anisotropy of Tensile Strained InGaN/AlInN Quantum Wells for TM Mode Lasers", J. Appl. Phys., 108, 083108, 2010. (SCI) DOI: 10.1063/1.3498805.

47.      Huai-An Chin, I-Chun Cheng*, Chih-I Huang, Yuh-Renn. Wu, Wen-Sen Lu, Wei-Li Lee, Jian Z. Chen, Kuo-Chuang Chiu, and Tzer-Shen LinTwo dimensional electron gases in polycrystalline MgZnO/ZnO heterostructures grown by rf-sputtering process”, Journal of Applied Physics, 108, 054503, 2010. (SCI) DOI:10.1063/1.3475500

48.      Huei-Min Huang, Hung-Hsun Huang, Yuh-Renn Wu*, and Tien-Chang Lu*, “Abnormal polarization switching phenomenon in a-plane AlxGa1-xN”, Optics Express, V18, No. 21, pp21743-21749, 2010. (SCI) DOI:10.1364/OE.18.021743

49.      T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu* and H.-H. Tseng, "Strain-enhanced photoluminescence from Ge direct transition", Appl. Phys. Lett., 96, 211108, 2010. (SCI) DOI:10.1063/1.3429085

50.      Hung-Hsun Huang and Yuh-Renn Wu*, "Light Emission Polarization Properties of Semipolar InGaN/GaN Quantum Well", J. Appl. Physics, Vol. 107, pp053112-1-7, 2010. (SCI) DOI:10.1063/1.3327794

51.      Hung-Hsun Huang and Yuh-Renn Wu*, "Light Emission Polarization Properties of Strained (11-22) semipolarInGaN Quantum Well", Physica status solidi c, Vol. 7, no. 7-8, 2010. (SCI) DOI: 10.1002/pssc.200983456.

52.      Cheng-Yu Chang and Yuh-Renn Wu*, "Study of Light Emission Enhancement in Nanostructured InGaN/GaN Quantum Wells", IEEE Journal of Quantum Electronics, Vol. 46, no. 6, pp884-889, 2010. (SCI) 10.1109/JQE.2010.2040515

53.      Chih-I Huang, Huai-An Chin, Yuh-Renn Wu*, I-Chun Cheng, Jian Z. Chen, Kuo-Chuang Chiu, and Tzer-Shen Lin, "Mobility Enhancement of Polycrystalline MgZnO/ZnO Thim Film Layer with Modulation Doping and Polarization Effect", IEEE Trans Electron Dev, Vol. 57, no.3, pp696-703, 2010. (SCI) 10.1109/TED.2009.2039527

54.      Huai-An Chin, Chih-I Huang, Yuh-Renn Wu, I-Chun Cheng, Jian Z. Chen, Kuo-Chuang Chiu, and Tzer-Shen Lin, “Influences of polarization effects in the electrical properties of polycrystalline MgZnO/ZnO heterostructure,” Mater. Res. Soc. Symp. Proc., 1201, H4.5, Nov. 2009 (EI) DOI:10.1557/PROC-1201-H04-05

55.      Hung-Hsun Huang and Yuh-Renn Wu*, "Study of Polarization Properties of Light Emitted from a-plane InGaN/GaN Quantum Well-based Light Emitting Diodes", Journal of Applied Physics, Vol. 106, p023106, 2009. (SCI) DOI: 10.1063/1.3176964 .

56.      Kun-Mao Pan, Yun-Wei Cheng, Liang-Yi Chen, Ying-Yuan Huang, Min-Yung Ke, Cheng-Pin Chen, Yuh-Renn Wu and JianJang Huang, "Polarization dependent sidewall light diffraction of LEDs surrounded by nanorod arrays", IEEE Photonics Technology Letters, Vol. 21, no.22, pp1683-1685, 2009. (SCI) 10.1109/LPT.2009.2031682

57.      Yuh-Renn Wu*, Chinghua Chiu, Cheng-Yu Chang, Peichen Yu, and Hao-Chung Kuo, “Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs”, IEEE Journal of Selected Topics in Quantum Electronics, Vol. 15, no. 4 , pp1226-1233, July/Aug, 2009. (SCI) DOI:10.1109/JSTQE.2009.2015583

58.      Yuh-Renn Wu*, Yih-Yin Lin, Hung-Hsun Huang, and Jasprit Singh, "Electronic and Optical Properties of InGaN Quantum Dot based Emitters for Solid State Lighting", Journal of applied physics, vol. 105, p013117, 2009. DOI:10.1063/1.3065274 (SCI)

59.      Chih-I Huang, Yuh-Renn Wu*, I-Chun Cheng Chen, J.Z. Kuo-Chuang Chiu Tzer-Shen Lin "Mobility Study of Polycrystalline MgZnO/ZnO Thin Film Layers with Monte Carlo Method", Computational Electronics, 2009. IWCE '09. 13th International Workshop on, 27-29 May 2009. (EI) DOI: 10.1109/IWCE.2009.5091118

60.      Chi-Kang Li, Yuh-Renn Wu* and Jasprit Singh, "Modeling of Junction Temperature and Current Flow in High Power InGaN/GaN Light Emission Diodes Using Finite Element Methods",  Computational Electronics, 2009. IWCE '09. 13th International Workshop on, 27-29 May 2009. (EI) DOI: 10.1109/IWCE.2009.5091121

61.      Yuh-Renn Wu*, Peichen Yu, C.H. Chiu, Cheng-Yu Chang , and H.C. Kuo, “Analysis of Strain Relaxation and Emission Spectrum of A Free-Standing GaN-based Nanopillar”, proceeding of SPIE, Vol 7058, p70580G, 2008. (EI) DOI:10.1117/12.800658

62.      Peichen Yu , C. H. Chiu , Yuh-Renn Wu, H. H. Yen, J. R. Chen, C. C. Kao, Han-Wei Yang, H. C. Kuo, T. C. Lu, Y. W. Yeh, and S. C. Wang, " Strain Relaxation Induced Micro-Photoluminescence Characteristics of a Single InGaN-based Nanopillar Fabricated by Focused Ion Beam Milling " Appl. Phys. Lett., Vol 93, p081110, 2008. (SCI) DOI:10.1063/1.2965461.

63.      J. W. Chung, X. Zhao, Y.-R. Wu, J. Singh, and T. Palacios “Effect of image charges in the drain delay of AlGaN/GaN high electron mobility transistors”, Appl. Phys. Lett., vol 92, P093502, 2008. (SCI) DOI: 10.1063/1.2889498

64.      C. Y. Liu, A. Datta, N. W. Liu, Y. R. Wu, H. H. Wang, T. H. Chuang, and Y. L. WangEnhanced growth of anodic alumina nanochannels on Ga-ion pre-irradiated aluminum” J. Vac. Sci. Technol. B, Vol. 26, pp651-654, 2008. (SCI) DOI:10.1116/1.2890706

65.    Yuh-Renn Wu*, John M. Hinckley, and Jasprit Singh  Extraction of Transport Dynamics in AlGaN/GaN HFETs Through Free Carrier Absorption”, Journal of Electronic Materials, Vol.37, No. 5, pp578-584, 2008. (SCI) DOI: 10.1007/s11664-007-0320-4
66.    Yuh-Renn Wu* and Jasprit Singh, “Transient Study of Self-heating Effects in AlGaN/GaN HFETs: Consequence of Carrier Velocities, Temperature, and Device Performance” J. Appl. Phys., vol. 101, p113712, 2007 (SCI). DOI: 10.1063/1.2745286

67.      S. Y. Yang, Q. Zhan, P. L. Yang, M. P. Cruz, Y. H. Chu, R. Ramesh, Y.-R. Wu, J. Singh, W. Tian, and D. G. Schlom, “Capacitance-voltage characteristics of BiFeO3/SrTiO3/GaN heteroepitaxial structures,” Appl. Phys. Lett., vol. 91, p022909, July, 2007.(SCI) DOI: 10.1063/1.2757089

68.      Yuh-Renn Wu*, Madhusudan Singh, and Jasprit Singh," Device Scaling Physics and Channel Velocities in AlGaN-GaN HFETs: Velocities and Effective Gate Length", IEEE Trans Electron Dev, 53, pp. 588-593, April, 2006. (SCI) DOI: 10.1109/TED.2006.870571

69.      Yuh-Renn Wu*, Madhusudan Singh, and Jasprit Singh," Sources of Transconductance Collapse in III-V nitrides - Consequences of velocity-field relations and source-gate design" , IEEE Trans Electron Dev, vol. 52, no. 6, pp.10481054, June, 2005. (SCI) DOI:10.1109/TED.2005.848084

70.      Madhusudan Singh, Yuh-Renn Wu and Jasprit Singh," Velocity Overshoot Effects and Scaling Issues in III-V Nitrides ", IEEE Trans Electron Dev, 52, 3, pp 311-316, 2005. (SCI) DOI:10.1109/TED.2005.843966

71.      Yuh-Renn Wu* and Jasprit Singh," Polar Heterostructure for Multi-function Devices: Theoretical Studies", IEEE Trans Electron Dev, 52, 2,284-293, 2005. (SCI) DOI: 10.1109/TED.2004.842546

72.      Yuh-Renn Wu* and Jasprit Singh, "Metal piezoelectric semiconductor field effect transistors for piezoelectric strain sensors". Appl. Phys. Lett., 85, 2004, pp 1223-1225. (SCI) DOI: 10.1063/1.1784039

73.      Madhusudan Singh, Yuh-Renn Wu and Jasprit Singh, "Examination of LiNbO3 / nitride heterostructures". Solid-State Electron, 47, 12, 2003, pp 2155-2159. (SCI) DOI:10.1016/S0038-1101(03)00189-8

74.      Yuh-Renn Wu*, Madhusudan Singh and Jasprit Singh. "Gate leakage suppression and contact engineering in nitride heterostructures", J. Appl. Phys., 94, 5826-5831, 2003. (SCI) DOI: 10.1063/1.1618926

75.      A. Datta, Yuh-Renn Wu, Y. L. Wang, “Real-time Observation of Ripple structure formation on a diamond surface under focused ion-beam bombardment”, Physical Review B, 63, 125407, 2001. DOI: 10.1103/PhysRevB.63.125407

76.      A. Datta, Yuh-Renn Wu, Y. L. Wang, “Gas-assisted focused-ion-beam lithography of a diamond (100) surface”, Appl. Phys. Lett. 75, pp2677, 1999. (SCI) DOI:10.1063/1.125116 

Book Chapter:

1.      Yuh-Renn Wu, Madhusudan Singh, and Jasprit Singh, “Lateral and Vertical Charge Transport in Polar Nitride Heterostructures: Applications for HEMTs, Novel Vertical Junction and Sensors” - Polarization Effects in Semiconductors - From Ab InitioTheory to Device Applications: Springer US, Oct. 2007

 

International Conference Papers and Presentations

1.          Chen-Kuo Wu, Chung-Cheng Hsu, Chi-Kang Li, Tien-Chang Lu, and Yuh-Renn Wu*,” 3D numerical analysis of carrier transport in light emission diodes with V-shaped pits“, ISGN-6, Hamamatsu, Japan, 11/8-11/13, 2015.

2.          Chen-Kuo Wu, Chi-Kang Li, and Yuh-Renn Wu, “Investigation of Carrier Transport in Nitride Based LED by Considering the Random Alloy Fluctuation”, 14th International Conference on Numerical Simulation of Optoelectronic Devices, T

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