We concentrate our research on developing versatile specific synthesis techniques for Si, SiC, graphite, and graphene based nanostructures for future optoelectronic and photonic device applications. The ultimate goal is to implement versatiles light-emitting diodes, waveguide devices, modulators, lasers, photodetectors and solar energy converters, and most of them will be applied to the Si nanophotonic interconnects. Several featured researches including low-temperature and threshold ICP plasma based PECVD synthesis for Si and SiC quantum dots, and few-layer graphene nano-sheets have been reported. The remarkable works include a Si-QD based MOSLED with external quantum efficiency of >2.4% and emission power of >2 micro-watts, a Si-QD doped SiOx waveguide amplifier with gain of >100 cm-1, and a Si-rich SiC PVSC with conversion efficiency of >4%.
On the other hand, we are interested in studying versatile fiber laser schemes for potential applications on ultrafast optoelectronic diagnosis and high-speed fiber-optic communications, etc. Over past decades, we have constructed different types of actively and passively mode-locked Erbium-doped fiber amplifier lasers or semiconductor optical amplifier and laser diode incorported fiber ring lasers. In particular, we have proposed an backward optical injection mode-locked semiconductor optical amplifier fiber laser system, which delivers femtosecond pulsewidth after external soliton compression and facilitates high-repetitive low-supermode-noise output. The other milestones of our works include the 29-fs EDFL and 50-fs SOAFL, the 40th-order rational harmonic mode-locking of EDFL with a FPLD based mode-locker, and the graphite/charcoal/carbonblack mode-locked EDFL with sub-500fs pulsewidth, etc.
In brief, the distinguished researching fields on Si/SiC/C nanophotonic devices, ultrafast mode-locked fiber lasers, DWDM-PON transmission network, and all-optical data conversion links are emphasized in our laboratory, which include:
A. Femtosecond Mode-Locking and Soliton Compression Fiber Lasers with carbon nano-tune, graphene nano-sheets, graphite nano-particles, charcoal and carbon black nano-powders.
B. PECVD Grown Nanocrystallite Silicon and Silicon Carbide MOSLEDs, Waveguide Amplifiers and Solar Cells.
C. Semiconductor Optical Amplifier or Laser Diode Based All-Optical OC-192 NRZ/RZ OOK Data Converters
D. Injection-Locked Weak-Resonant-Cavity Colorless Laser Diode Based OOK or OFDM Directly Modulated DWDM-PON Transmitters
E. Ultrafast Photoconductors for Millimeter-Wave Generators, Optoelectronic Phase-Locked Loops and Phase Shifters
Publication list please refer to http://www.ee.ntu.edu.tw/profile?id=734 or http://scholar.google.com/citations?user=QfFMP0cAAAAJ&hl=en.