第五十五期 2010年7月刊
 
 
 
发行人:黄升龙所长  编辑委员:蔡睿哲教授  主编:林筱文  发行日期:2010.07.05
 
 
 本所林恭如教授荣膺英国物理学会会士 (Fellow of The Institute of Physics in UK, FInstP)」~

本所7月份演讲公告:

日期

讲者简介 讲题 地点 时间

光电论坛

7/8 (Thu)

郑克勇教授

Department of Electrical and Computer Engineering, University of Illinois at Urbana- Champaign

Hyper-uniform nanophotonic technology for ultra-fast optical systems - A review of activities at UIUC

博理馆

101演讲厅

14:30~16:30
 
 
6月份「光电论坛」演讲花絮
时间: 2010年6月4日(星期五)下午2点30分
讲者: Prof. Marek Osinski (University of New Mexico)
讲题: Biomedical applications of colloidal nanocrystals
  Prof. Marek Osinski于6月4日(星期五)莅临本所访问,并于博理馆101演讲厅发表演说,讲题为「Biomedical applications of colloidal nanocrystals」,本所教师及学生皆热烈参与演讲活动,获益良多。

 

时间: 2010年6月11日(星期五)下午2点30分
讲者: Prof. Kuang-Chien Hsieh (Department of Electrical and Computer Engineering, University of Illinois, Urbana-Champaign)
讲题: Low-Temperature Grown Compound Semiconductors for Optoelectronic Device Applications: Distributed Bragg Reflectors and Wafer Bonding Agents
  Prof. Kuang-Chien Hsieh 于6月11日(星期五)莅临本所光电论坛发表演说,讲题为「Low-Temperature Grown Compound Semiconductors for Optoelectronic Device Applications: Distributed Bragg Reflectors and Wafer Bonding Agents」,本所教师及学生皆热烈参与演讲活动。Prof. Kuang-Chien Hsieh演讲内容精彩,演讲时面面俱到,与本所师生互动佳。

本场演讲者Prof. Kuang-Chien Hsieh

时间: 2010年6月18日(星期五)下午2点30分
讲者: 洪瑞华教授(成功大学光电系)
讲题: 高能隙氮化铟镓太阳电池技术开发
  洪瑞华教授于2010年6月18日(星期五)莅临本所光电论坛发表演说,讲题为「高能隙氮化铟镓太阳电池技术开发」,本所教师及学生皆热烈参与演讲活动。洪瑞华教授演讲内容丰富精彩,与现场同学互动佳,本所师生皆获益良多。

本场演讲主持人林恭如副所长(左)与洪瑞华教授(右)合影。

 

 
 

High-order rational harmonic mode-locking and pulse-amplitude equalization of SOAFL under optical injection

Professor Gong-Ru Lin

Graduate Institute of Photonics and Optoelectronics, National Taiwan University

台湾大学光电所 林恭如教授

First of all, we demonstrate the 20th-order rational harmonic mode-locking (RHML) semiconductor optical amplifier fiber laser (SOAFL) pulses by using 1 GHz backward dark-optical comb injection,  and  discuss  the  competition  between  mode-locking mechanisms in the SOAFL at high-gain and strong optical injection condition at higher RHML orders.  As the rational harmonic order increases up to 20, the auto-correlation traces and optical spectra of the RHML-SOAFL at different RHML orders are characterized.  The Fig. 1. shows that the normalized auto-correlation traces of the SOAFL at 1st, 5th, 10th, and 20th RHML orders gradually changes the pulsewidth from 13.5 to 35 ps.  The Fig. 2. exhibits that the SOAFL spectrum with red-shifted wavelength and reduced linewidth from 12 to 3 nm at RHML order increases to >8 reveal a less pronounced high-order RHML mechanism when competing with the continuous-wave lasing mechanism.  Furthermore, in order to solve the problem of uneven RHML pulse-amplitude, we use the reshaped 10-GHz gain-switching FPLD double-peak pulse to reconstruct the gain profile of SOA in time domain, the 4th-order RHML-SOAFL is demonstrated for achieving 40-GHz RHML pulse-train with optimized performance of pulse-amplitude equalization (PAE).  The Fig. 3. shows the auto-correlation traces of 4th-order RHML pulse-train without and with PAE.  Such the indirect gain compensation further balances the amplitude fluctuation from 45% to 3.5% when obtaining 40-GHz RHML pulse-train.  After initiating the PAE, the uncorrelated phase noise contributed by the residual ASE noise of the RHML-SOAFL is significantly decreased, which leads to a timing jitter reducing from 0.5 to 0.28 ps as shown in Fig. 4. and provides an amplitude-equalization pulse-train repeated at 40 GHz to meet the demand of being a perfect RZ pulsed carrier for its future application in OTDM network.

Reference:   G. -R. Lin et al., Optics Express, Vol. 18, No. 9, pp. 9570-9579, Feb. 2010.

Fig. 1. The auto-correlation traces of SOAFL at 1st, 5th, 10th, and 20th RHML orders. Fig. 2. Evolution on RHML-SOAFL spectra at different RHML orders.

Fig. 3. Auto-correlatted traces of 40-GHz RHML pulse-train without and with pulse-amplitude equalization. Fig. 4. The timing jitter of 40 GHz RHML pulse-train without and with pulse-amplitude equalization.

 

Emitter Apodization Dependent Angular Luminance Enhancement of Microlens-Array Film Attached Organic Light-Emitting Devices

Professor Hoang-Yan Lin

Graduate Institute of Photonics and Optoelectronics, National Taiwan University

台湾大学光电所 林晃岩教授

Taking organic emitter apodization calculated from electromagnetic theory as input, the angular luminance enhancement of a microlens-array-film (MAF) attached OLED (organic light-emitting device) can be further evaluated by ray-tracing approach. First, we assumed artificial emitters and revealed that not every OLED with MAF has luminance enhancement. Then, the OLEDs of different Alq3 thickness were fabricated and their angular luminance measurement validated simulation results. Mode analyses for different layers were performed to estimate the enhancement potential of the MAF attached devices. In conclusion, the organic emitters with higher off-axis-angle luminous intensity cause lower out-coupling efficiency but gain higher enhancement after the MAF attached.

Fig. 1. (a) The simulated source apodization varying Alq3 thickness from electromagnetic theory; (b) the simulated luminance from geometrical optics; (c) the validation of experimental results.

Fig. 2. (a) Mode ratios calculated by transfer matrix method with embedded sources. The blank area of each bar represented the optical power ratio of the surface plasmonic mode; (b) the experimental mode ratios.

 

 
 
论文题目:以气态源分子束磊晶法成长三五族化合物半导体结构与组件

姓名:林佑儒   指导教授:林浩雄教授


摘要

首先,我们研究锑砷化镓/砷化镓第二型量子井结合砷化铟量子点应力子的复合结构。我们使用相同复合结构当做 激光主动层,发现以5-nm 厚度间隔层的复合结构,可降低原本锑砷化镓第二型单量子井的起振电流密度、内部光学损耗,并增加内部量子效率、模态増益和特征温度,原因在于砷化铟应力子在量子井界面上增强了位能波动,使得跃迁矩阵元素增加。

第二部分,我们使用气态源分子束磊晶法成长并研究砷化镓于有图案的硅奈米沟渠,样品是由台湾集成电路股份有限公司(TSMC)所提供。据我们所知,这是首次使用分子束磊晶法成长砷化镓磊晶于奈米硅沟渠宽度小于100 nm的研究。

图一、共振腔倒数对起振电流密度作图: 三种不同主动结构的激光:单量子井,5nm-复合结构和10nm-复合结构

图二、砷化镓成长于85nm-宽度的奈米硅沟渠的截面TEM影像

 

 

 

论文题目:各向异性光波导及光子晶体与周期性电浆子结构之有限差分频域特征模态分析方法之发展

姓名:陈明昀   指导教授:张宏钧教授


摘要

本论文提出以全向量有限差分频域法推得标准特征方程式,以之分析具各向异性材料的光波导及光子晶体。利用全向量式有限差分频域法之波导模态求解模型,得以简单而有效率地计算出含任意导电率张量的各向异性光波导的导波模态,例如液晶光波导如图一所示,利用全向量式有限差分频域法可以分析出导波模态当如图二所示。

针对于含各向同性或平面各向异性材料的二维光子晶体的能带分析,在波传播方向为平行于周期性平面而横向电场与横向磁场波模不互相耦合与耦合的情况下,本研究以有限差分频域法推导特征方程式做有效率的计算。此全向量特征方程式可进一步推展以分析具任意导电率张量的三维光子晶体,本研究以之计算探讨三维各向同性简单立方光子晶体及具各向同性或各向异性材料的光子晶体平板结构的能带特性。

除了各向异性波导模态与光子晶体能带的计算外,本研究亦推导标准特征方程式以分析计算具一维周期与忽略损耗的实际金属的二维三维表面电浆子波导,得以有效率地获得二维及三维周期性波导的色散能带特性与导波模态。

图一 图二

 

 
 
 

— 数据提供:影像显示科技知识平台 (DTKP, Display Technology Knowledge Platform) —

— 整理:林晃岩教授、陈冠宇 —

有机晶体管驱动可缠绕于笔上的有机显示器

索尼开发出了厚度仅为80 μm的4.1吋超薄OLED面板,薄膜底板的厚度减至20 μm,而封装膜为25 μm,而且除了画素内的TFT外,闸极驱动电路也是基于有机半导体材料制作而成的,结构图如图一。现已证实该面板的柔软性较高、至少可弯曲到曲率半径为4 mm的状态。索尼在显示器技术国际研讨会SID 2010上发布该项成果,论文编号47.3。

 

OLED面板的画素数为432 × 240 × 3(RGB),每个画素的尺寸为210 μm见方,精细度为121 ppi(Pixels Per Inch)。采用顶部发光型OLED,OTFT电路属2T-1C的驱动方式,可以显示约1677.7万色,面板的最大亮度超过100 cd/m2,对比可超过1000:1。

 

此次产品的关键之处是:除了画素内的TFT外,闸极驱动电路等周边电路也是采取有机TFT制作的。如果只是要弯曲面板之一部分的话,以前所开发的产品也可以做到;不过若想弯曲整张面板的话,布线问题是一个障碍,驱动IC也显得比较硬。此次开发改进了布线配置,而且还利用有机TFT制作周边电路,从而可以轻松地一层层缠绕整张面板,如图二。

 

之所以能利用有机TFT制成驱动电路等,是因为索尼利用独立开发的有机半导体材料所制作的有机TFT性能非常高的缘故。此次有机TFT的制作采用了“PXX(Peri-Xanthenoxanthene)衍生物”。这是一种把由6个苯环构成的现有分子的一部分,用氧原子、苯基以及烷基来取代之后形成的衍生物,实现了材料的稳定性、高迁移率、可溶性以及高配向性,分子式如图一。

 

基于这种PXX衍生物制作TFT时的载流子迁移率为0.4 cm2/Vs,高达一般有机半导体材料—并五苯的4倍。另外,加载低闸极电压时,电流增加倾向的倒数值—亚阈值振幅(sub-threshold swing)仅为并五苯的1/2,电流值的开关比为106,结果加载一定电压时可以获得的电流,与并五苯相比达到其8倍以上。在OLED中,越是可以获得较大的电流值,就越容易实现高亮度和高灰阶。另外,已经证实该有机TFT的驱动频率最大为60Hz时也没有问题,可以显示移动速度相当快的视讯。此次的有机TFT采取蒸发法制作,不过利用涂布工艺制作TFT时也可以显示出同样的性能,因此下一个目标是采取印刷法制作TFT。

 

图一、可卷绕有机显示器结构图

图二、OTFT-OLED (a) 平面的状态下显示 (b) 卷曲半径4 mm下显示

 

中文新闻来源:

http://big5.nikkeibp.com.cn/news/flat/51693-20100531.html

英文新闻来源

http://www.engadget.com/2010/05/26/sonys-rollable-oled-display-can-wrap-around-a-pencil-our-heart/

论文来源:

“47.3: A Rollable AM-OLED Display Driven By OTFTs”, Soc. Infor. Display Tech. Digest, 2010, (p 710-713), Makoto Noda, Norihito Kobayashi, Mao Katsuhara, Akira Yumoto, Shin-ichi Ushikura, Ryo-ichi Yasuda, Nobukazu Hirai, Gen Yukawa, Iwao Yagi, Kazumasa Nomoto, and Tetsuo Urabe.

   
 
 
 
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