发行人:杨志忠所长    编辑委员:蔡睿哲教授    主编:林筱文    发行日期:2006.12.01

最新消息与活动公告   所务公告及活动花絮   特别报导   人物专访   实验室介绍   健康小站

最新消息与活动公告

 

   「北北区影像显示科技人才培育电子报」2006年第八期出刊啰~

「北北区影像显示科技人才培育电子报」2006年第八期热腾腾出炉啰!想知道影像显示光电科技人才培育中心的最新消息与活动讯息吗?欢迎踊跃点览~

   本所12月演讲公告:

日期 讲者简介 讲题 地点 时间

12/06

John E. Bowers

ECE Department

University of California Santa Barbara

Silicon Evanescent Photonic Integrated Circuits

博理馆

201 会议室

14:00-16:00

12/22

Prof. Chi H. Lee (李齐湘)

University of Maryland, College Park, U.S.A.

Polymer Photonics

博理馆

101 演讲厅

16:30-18:30

 

所务公告及活动花絮

 

11月光电论坛演讲花絮

 

时间:113日下午430

讲者:张庆瑞主任(国立台湾大学物理系系主任
讲题:
-From Electronics to Spintronics-The world is spinning

张庆瑞主任于2006113日莅临本所「光电论坛」演讲;张主任专长为凝态物理理论及自旋相关电子在奈米结构的传输与应用。

 

时间:1110日下午430

讲者:李镇樟DivX大使
讲题:
"Digital Lifestyle Innovation and Venture Investment"

             "a personal perspective by an Angel"

李镇樟为国际知名未来家与天使投资家。

李镇樟曾在美国台湾、新加坡、香港等地的重要机构从事高科技开发、管理、策略规划及投资等工作,曾帮助许多各国青年创业家建立世界级企业。今年开始以北京为基地,希望可以帮助更多国内外青年创业家成功创立数位时代的标竿企业。

 

特别报导

 

~与韩国首尔大学博士生交流活动计划~

【第一届台湾大学—首尔大学光电子材料与组件研究生交流学术研讨会】

(时间:2006年11月19日至24日;地点:韩国首尔国立大学)

花絮整理:光电所博士班学生林皓武

第一届台湾大学-首尔大学光电子材料与组件研究生交流学术研讨会甫于200611月19日至1124日于韩国首尔大学举行。此次交流活动皆为双方第一次举办此类的研讨会,该研讨会以双方研究生为主,我们必须自己设计协商会议举行方式,同时双方各派代表主持会议,会议发表人也都是以研究生为主。

在这几天的活动当中,参加此活动的韩国教授、学生们都非常热情好客的招待我们。在交通、餐点以及会议规划的安排上,都可以体会到他们细心周到的考量。在会议之外的参访行程当中,他们也都相当大方的与我们交换各种心得,话题从彼此研究的主题开始,到语言、风俗、历史、政治、宗教、经济、食物、交通等各方面。在这些交流当中,我们了解到虽然彼此生长的环境不同,但其实彼此都有着类似的理想,价值观也相去不远。

此次会议的内容,大约可以分成六部分:()氮化物的成长、量测、分析,()奈米结构的成长、量测、分析,()发光组件,()有机发光二极管,()波导与非线性光学,()砷化铟镓半导体。在三十分钟的口头报告中,内容包含介绍自己实验室与个人研究题目。由于对双方的研究生而言,大多数人是第一次发表如此长的英文口头报告,除了发表自己学术研究上的成果外,还兼需简介自己所属实验室的研究方向与贡献,大家都以紧张、谨慎的态度准备并完成此次的演讲。会议结束后紧接着是韩国大型实验室的参访,包括首尔大学内的 ISRC (Inter-university Semiconductor Research Center) 与位于首尔郊区的 KANC (Korea Advanced Nano Fab Center)。此次参访让我们体验到韩国的研究环境以及研究精神。

虽然为了准备本次交流活动,大家的心情都是兢兢业业、紧张且兴奋,但是结果却是非常丰硕。在四天学术思考、文化风俗、语言沟通的冲击下,大家都以满载而归的心情回国,但也踏出了我们研究生国际观的第一步。

而这次能够如此顺利完成整个交流活动,需要感谢同行的三位教授:杨志忠所长、黄升龙副所长以及李允立教授,都十分辛苦的陪同、指导我们完成这次的交流活动,除此之外,陈正言队长以及光电所办公室的林筱文小姐在事前的准备上更是投入了许多的心力。而此次学校在经费上的赞助更是促成此行最重要的原因。虽然这次只是第一届的交流活动,但我认为这次的活动对在台湾攻读学位的研究生是相当有意义的,对我们的脑力、交流沟通的激荡更胜于参加一般国际研讨会。希望这样的活动能够继续的举办下去。我相信以后能有同学或学弟妹能够继续参加这样的活动,一定也会有与我们有相同的感觉,在这样的活动中,满载而归。

我方代表团与会教授、研究生与韩国主办教授 Prof. Euijoon Yoon 合影

参与发表的双方师长与学生于会议厅合影

 

人物专访

刘致为教授 (C. W. Liu)

Prof. Liu was born in Taipei, Taiwan, 1963.

He received both the B.S. and M.S. degree in electrical engineering from National Taiwan University in 1985 and 1987, respectively. He received the Ph.D. degree in electrical engineering from Princeton University in 1994.

He was with the department of Electrical Engineering, National Chung-Hsing University in 1994-95. He has joined the Department of Electrical Engineering, National Taiwan University as an associate Professor since 1996. In 2001, he became a full Professor.

Prof. Liu also led a SiGe project in ERSO/ITRI through a special arrangement between NTU and ITRI as a research director with the rank of senior full researcher from 2001 to 2005.

The research in Prof. Chee Wee Liu’s group is based on the SiGe:C and strained Si/high-K/metat gate, including (1) CMOS and Bipolar circuit design using (strained) Si CMOS and Si/SiGe:C HBTs; (2) device modeling and simulation on Strained Si/Ge FET, HBT, and optoelectronics devices; (3) CMOS optoelectronics with detector, emitter and waveguide; (4) material technologies such as SOI, GeOI, SSDOI, smart-cut, buckling quantum wells, nano-mechanics, and strained-SiGe:C; and (5) the rapid thermal processors for RTA, RTO, RTCVD, and wafer bonding. The strained Si/high-K/metal gate is intentionally to bypass the red brick wall on the ITRS roadmap, but the novel applications such as optoelectronics application are also focused. To lower the cost of strained Si technology, special local strain (process strain) technologies are being developed with calibrated process simulation.

  1. CMOS Image sensor / Circuit Design and Processing

    • (Strained) Si CMOS and Si/SiGe HBT Design:
      Strained Si device has a speed enhancement of 10-20%. The circuits such as ring oscillator and trans-impedance amplifier (TIA) is being optimized to use the strained Si devices. For pure bipolar, the power amplifer (PA) for 802.11a+b+g is being developed by using low cost SiGe HBTs. The integrated Photodetectors and TIA are being developed.

    • CMOS Image Sensor:
      An image sensor is a device that converts visual image to an electric signal. It is used chiefly in digital cameras and other imaging devices. It is usually an array of charge-coupled devices or CMOS sensors. CMOS sensors have some advantages over CCDs. They can be fabricated using common CMOS methods, which are less costly, and they use less power in operation. Although initially used in less expensive cameras, the quality of CMOS sensors has improved steadily.

  2. Strained-Si / Ge FET Process

The superior transport property of Ge can reach high performance target in the future CMOS technology. However, the cost and unstable Germanium oxide make it difficult to replace Si as industry mainstream. Recently, the structure of ultra thin Ge epitaxially directly grown on Si with compressive strain was proposed. The advantages of high mobility, low cost and compatibility with CMOS process are promising in the future technology.

  1. Device Modeling and Simulation:

    • Device Modeling:
      BSIM and Mextram models are being developed to take the strain and optical effects into account for RF and high speed digital applications. Strained Si and MOS photodetector modeling are performed in 3-D and SOI simulations.

    • Device Simulation:
      Simulations on heterojunction structure of strained-Si/Ge devices are proposed. Finite element analyses of ISE-TACD and ANSYS are used to simulate Ge FET and MOS LED/GOI detector theoretically.

  2. CMOS Optoelectronics (including source, detector, and waveguide):

The LED and photodetectors, and waveguides using available CMOS technology have been our focus since 1996. Now the LED efficiency, circuit integration, and speed are being improved with nanotechnolgy -enhancements such as Ge/SiC/SiGe quantumd dots, surface plasmom, high-K dielectrics, nanoroughness. Extremely small, highly efficient, and VLSI integratable devices are main purpose of this study. The high-K material research is focused on these novel applications as well as gate stacks.

  1. Materials:

New SOI, GeOI, SSDOI material using smart cut, wafer bonding, and nano-mechanics are developed for future device applications. New properties of buckled material and nano-strained material are found and will be incorporated to future device design.

  1. RTP Equipments:

Beside the well-equipped functions such as RTA, RTO, RTCVD, a new wafer bonding technique is developed, and other novel RTP functions will be installed. The uniformity and throughput is the current research focus.

  1. Mechanical Strained TFTs:

Strained-Si technology has been used extensively as the mainstream Si industry. The method to enhance drive current and mobility of TFTs by external mechanical strain is proposed.

  1. Optical Commuincation Front-end:

Integrated detector and TIA

  1. Optical Interconnect

The machine has the standard MESC interface, and it can be combined with cluster tool. Now it has functions of rapid thermal oxidation, rapid thermal annealing, chemical vapor deposition, and very high vacuum cleaning, and they can be performed in the same machine.

1. 2003-2005 Outstanding Research Award, National Science Council, Taiwan. (国科会杰出研究奖)

2. 2003, 2004 Outstanding Research Award, ERSO/ITRI.

3. Six-time recipients of research award, National Science Council, Taiwan (1995-2000).

4. Invited talk:

205th, 206th (two talks) ECS (Meeting of the Electrochemical Society) , 2004;

2nd ISTDM (International SiGe Technology and Device Meeting), 2004;

10th SNDT (Symposium on Nano Device Technology), 2003;

International Topical Meeting on Microwave Photonics, 2003.

5. (sub)committee member:

Technical program chair, 4th (2008) ISTDM (International SiGe Technology and Device Meeting);

2007 International Symposium on Compound Semiconductors (ISCS);

5th ICSI (International Conference on Silicon Epitaxy and Heterostructures), 2007;

4th ICSI (International Conference on Silicon Epitaxy and Heterostructures), 2005;

1st (2003), 2nd (2004) and 3rd (2006) ISTDM (International SiGe Technology and Device Meeting);

206th (2004), 210th (2006) ECS (SiGe: Materials, Processing, and Devices Symposium, Meeting of the Electrochemical Society);

VLSI/TSA (International Symposium on VLSI Technology, Systems, and Applications), 2003, 2004;

15th IIT (International Conference on Ion Implantation Technology), 2004;

SSDM (International Conference on Solid State Devices and Materials), 2004;

SMTW (Semiconductor Manufacturing Technology Workshop), 2002, 2003, 2004.

IEDMS (International Electron Devices and Materials Symposium), Taiwan, 2002.

6. IEEE Senior Member (M'99-SM'00)

7. Visiting Professor, Lucent, Bell Labs, 2001; National University of Singapore, 2004.

8. 发表在电子月刊作品「硅锗技术」一文 荣获机械 电机 化工 电子月刊评比金笔奖佳作。

9. 指导学生华伟君及余承晔參与「高效能之形变硅異质结构互补式金氧半场效晶体管」案获得93 年工研院电子所「杰出创新奖」。

10. 指导学生余承晔參与「免除硅锗缓冲层之在硅上压缩应变锗且利用硅表层保护P 型场效晶体管」案获得

      2005年工研院电子所「卓越研究创新奖」。

11. 指导学生袁锋获得2004 年度SRC Fellowship (US$1,700x12/year+tuition)

12. 指导学生郭平升論文「金氧半光侦测器」获得93 年度国立台湾大学科林論文奖硕士班组优等奖。

13. 指导学生张书通論文「创新硅基材料与组件之物理与应用」获得九十二年度国立台湾大学科林論文奖博

      士班组优等奖。

14. Organization committee member, The 15th International Conference on Ion Implantation 2004.

15. Organizer: 2002 Taiwan 1st SiGe workshop.

16. 荣获2002 SRC (Semiconductor Research Corporation) Cross-Disciplinary Semiconductor Research (CSR)

      Program award of US$ 40,000 to the “CMOS optoelectronics” project.

17. 2001 荣获中国电机工程学会之「优秀青年电机工程师奖」。

18. 指导学生陈冠復論文「利用氧化层的粗糙度增强金氧半组件的光电可靠度特性之研究」获得中国电机工

      程学会青年論文奖第三名。

19. 中华民国台湾半导体产业协会半导体学生委员会委员。

20. 工研院电子所研究组长及资深正研究员,研发用于40G/bit 之晶体管及85013001550 nm 的光侦测器。

21. APL/JAP, IEEE trans. VLSI; robotics and automation, IEEE Electronic Device Letters, and Material Chemistry

      and Physics: Reviewer.

22. 1995-2000 六次国科会甲种奖

23. Best paper award, Material Chemistry and Physics, 2001.

24. The 1st place winner of Best Student Paper Award, ISDRS (International Semiconductor Device Research

      Symposium), 2001. C.-H. Lin, M. H. Lee, B.-C. Hsu, K.-F. Chen, C.-R. Shie, and C. W. Liu, “Oxide Roughness

      Enhanced Reliability of MOS Tunneling Diodes,” ISDRS Proceedings, pp. 46-49, 2001.

25. 指导学生林崇勋論文「超薄氧化层电性分析与增强可靠度之氘制程研究」获得国科会90 年度硕士論文

      奖。

26. 指导学生林崇勋論文「超薄氧化层电性分析与增强可靠度之氘制程研究」获得中国电机工程学会青年論

      文奖第一名。

27. Lam thesis award: 林崇勋 劉致为, 科林論文头等奖, 論文题目「超薄氧化层电性分析与增强可靠度之氚制

      程研究」, 2001.

28. Lam thesis award: 劉岳修 劉致为, 科林論文优等奖, 論文题目「超高真空快热机台之制造及其成长之超薄

      氧化层,多晶硅,硅锗之特性研究」, 2001.

29. Session chair, IEDMS (International Electronic Device and Material Symposium), Chung-Li, Taiwan, Dec.,

      2000.

30. Best student paper award, SNDT (Symposium on Nano Device Technology), 2001 (佳作 台湾大学电机系林崇

      ), C. H. Lin, M. H. Lee, and C. W. Liu, “New Experimental Evidences for the Relation between Si-H/D Bond

      Desorption and Injected Electron Energy in NMOS Tunneling Diodes,” 2001.

31. 指导学生林奕成論文「金氧半穿隧发光二极管之制作与特性量测」获得中国电机工程学会青年論文奖第

      三名。

32. 指导学生劉威廷获第一届力玮创新論文入围奖。論文名称「MOS 穿透二极管电流传导机制之详细研究并

      应用于光侦测器及LDMOS 之模拟」。

33. Lam thesis award: 指导学生曾扬玳硕士論文,获科林論文优等奖,論文题目「快热制程机台制作与硅锗碳

      模块技术」, 1999.

 

The Si CMOS has market size of ~200B USD in 2004. Without killer applications, it will be difficult to further increase its market size. The display has ~40B USD market size. Si can increase its market size by replacing the current technologies used in the display. The low cost and mature Si technologies can hopefully make LED display to outperform the TFTLCD in the display market. The indirect bandgap of Si and Ge makes the light emission from Si or Ge to be very inefficient (efficiency far less than a percent), and the bandgap of Si and Ge also limits the emission wavelength to infrared region (1.1 to 2 mm). We have tried very hard in the past decade to pump out the visible light from bulk Si by creating the hot electron/hot hole radiative recombination with the photon energy in the visible light range. Note that the switching speed of bulk Si MOS LED was around the order of m second, according to our previous results. This speed is sufficient for display applications. The quantum confinement of Si(Ge) nanocrystallite can have theoretical life time of ns.

The III-V LED (light emitting diode) display is limited by cost and size and only has niche applications of the display market. The direct bandgap engineering and nanocrystallite Ge(Si) can potentially tune the emission wavelength into visible wavelength, and can increase the light emission efficiency to ~10%. The m sec speed of MOSLED is sufficient for display applications. Due to the emission location from the nanocrystllite embedded in the oxide of the MOS LED. The Si wafer is not necessary and a metal-anode/oxide with embedded nanocrystallite /metal-cathode (MIM LED) is proposed to inject carriers from Schottky barriers. This MIM LED can be potentially fabricated on glass substrate with the size comparable with TFTLCD. This technology will enable Si to share the display markets with TFTLCD technology.

v 刘教授对于同学们在学习方面有下列的建议:  

1. 风檐展书读,古道照颜色

2. Team work is the most important.

 

实验室介绍

 

固态发光及透明电子实验室---黄建璋教授

黄建璋教授研究领域:

高效能发光二极管、奈米结构发光组件及材料、

有机及无机薄膜电机体制作及分析、可屈绕式透明晶体管及电路

一、高效能发光二极管

我们以特殊之表面粗化方式,制作一高效能发光二极管,其发光效率比一般结构高180%。

二、硅材料发光SiO2红光加GaN蓝光组件

我们发展出一种近白光的发光组件,将多孔隙的SiO2与蓝绿光发光二极管结合,经过高温退火后,硅的奈米晶体,将在多孔隙的SiO2膜中形成,利用电激发光(EL)量测,发现在低电压时,仍是只有蓝光出现,但当电压增加,红光波长强度逐渐增加,此乃是因为硅奈米晶体发光,将红/蓝/绿三种波长结合,形成近白光组件。

在高电压时产生红光

三、超高电流之ZnO TFT

新一代TFT半导体材料的候选者是以ZnO为主的氧化物,因为它具有透明度高,传导率高的优势。本研究是在改良ZnO-TFT的制程方式,达到最高效率的ZnO-TFT。我们以低温制程的方式,全程不超过150度,做出高效能的TFT,目前的成果可以在VG=5V时,IDS=1mA,为目前世界最高纪录。

可挠式ZnO-based 透明TFT

软性电子组件具有轻薄、可挠、耐冲击 之特性,适用于行动电话PDANotebook等可携式。本研究是在塑料基板上制作以氧化锌为通道层之可挠式透明薄膜晶体管(Transparent Thin Film Transistors, TTFT),由于氧化锌具有易于在低温下利用溅渡法沉积于各种基板上的优点,因此可将TTFT制程温度降低以符合塑料基板本身的温度限制。

五、有机晶体管交流讯号分析及模型建立

我们与工研院合作,对pentacene有机晶体管做交流讯号分析及模型建立,目前对于C-V profile 已发展出一套定性的模型,此模型与一般crystalline 晶体管在C-V 上有特性上的差别。

 

健康小站

 

鱼肝油+红酒=消小腹?

有此一说:

日前在电视节目上报导,在睡前空腹吃两颗鱼肝油(要有 OMEGA 3 的成份),配上50~100㏄红酒,可以消除小腹依据电视上医生的说法是:可以促进新陈代谢率,加速脂肪的分解。

请问:(1) 是否此法可行?

             (2) 成人一天鱼肝油的摄取量要多少才适当呢?男女有差别吗?

             (3) 鱼肝油中含的脂溶性维生素A、D、K,摄取过量是否会造成身体负担?无法自行由体内排出?

师回答

中国医药学院减重门诊主治医师 王国哲医师

1睡前吃鱼油加两杯红酒能消小腹当然是道听涂说含有 OMEGA 3 鱼油的鱼肝油属于健康食品,曾经有些

        研究显示可以升高好的胆固醇。但说能消小腹就太夸张了,因为如何确定吃下去的鱼油只作用在小腹?至于红

        酒更是没道理,曾经有些研究显示红酒可以预防心脏血管疾病。但是酒的热量也很高。以这种方法减重保证

        行。

2至于鱼肝油一天的摄取量,本人的建议是,没事不用吃鱼肝油。有事吃鱼肝油也不能治病所以不用吃

3食用过量确实会造成脂溶性维生素A、D、E、K囤积的可能。

 

本文由【KingNet 国家网络医院】提供

 

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