Chao-Hsin Wu received the B.S. degree in Electrical Engineering and M.S. degree in Graduate Institute of Photonics and Optoelectronics from National Taiwan University, Taipei, Taiwan, in 2002 and 2004, respectively. He used to work as a full-time teaching assistant in charge of Automatic Control Lab in the Department of Electrical Engineering in National Taiwan University from 2005 to 2006. He then joined the High-Speed Integrated Circuit group in University of Illinois at Urbana-Champaign in 2006 and received the Ph.D. degree in 2010. After finishing the Ph.D. degree, he continued working as a postdoctoral research fellow before he joined the faculty member in National Taiwan University.
In Illinois, he pioneered the development of novel III-V high-speed microelectronics and optoelectronics devices, including InGaN/GaN heterojunction bipolar transistors, InGaP/GaAs power amplifiers, and microcavity lasers. His research mainly focuses on the three-terminal light-emitting transistors (LETs) and transistor lasers (TLs). He has demonstrated the world-record optical spontaneous modulation bandwidth of 7 GHz (corresponding to a recombination lifetime of 23 ps), which is a breakthrough in semiconductor device technology history for the past 47 years. He has received the Nick and Katherine Holonyak, Jr. Graduate Research Award for the excellent achievement in semiconductor optoelectronics and high speed microelectronics area in 2010.