國立台灣大學光電工程學研究所
 
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本所成員-教師
 
Professor Name Education Link
  Hao-Hsiung Lin Ph.D., National Taiwan Univ., Taiwan R.O.C. Profile | Publication | Laboratory
E-mail hhlin@ntu.edu.tw
Office EE Building Ⅱ, R419
Office hour Thursday PM5:30~6:30, Friday AM8:00~9:00
Tel +886-2-33663670
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Research Topics

Our research field is mainly on the materials and devices of III-V compound semiconductor based on molecular-beam epitaxy (MBE) technology. Our first research project is the growth and characterization of dilute nitrides including GaAsSbN and InAsN. We have wide experiences on both materials. In 2002, we first demonstrated a 2.4 microns InAsN quantum well laser which possesses the longest wavelength among nitride lasers. We also have demonstrated GaAsSbN lattice-matched to GaAs and with a narrow energy gap of 0.8 eV.

  Our second project is the growth and characterization of InAsPSb alloy. We are the first group to deposit this alloy using gas-source MBE. In this subject, we have a long collaboration work with Prof. Krier at Lancaster University (UK) since 2003. Recently, we worked on the determination of the electronic structure of ternary InAsSb, including the spin-oribit, fundamental gap and band offset. For details, please refer to our publication list.

  Our third project is the heteroepitaxy of III-V compounds on patterned Si, which is supported by TSMC. The purpose is to explore the feasibility of replace the Si channel with III-V alloy.

Biography

Hao-Hsiung Lin (林浩雄) was born in Taichung, Taiwan, 1956. He received the B.S., M.S., and Ph.D degrees in electrical engineering from National Taiwan University, Taiwan in 1978, 1980, and 1985, respectively. During his Ph.D. work, he invented the emitter-thinning structure of heterojunction bipolar transistor (HBT), which is currently used in commercial HBTs. He has been with the Department of Electrical Engineering at National Taiwan University since 1980, and was promoted as a full professor in 1992. He was a visiting scholar at Stanford university, working on molecular beam epitaxy and deep-level transient spectroscopy, in 1985. From 2001 to 2004, he served as the vice chairman of the Department of Electrical Engineering, National Taiwan University. His research area is the molecular beam epitaxy (MBE) of III-V compound semiconductors. Besides the aforementioned HBT structure, he invented the first InAsN mid-infrared quantum well laser operating at 2.4 mm. His current research interests are on the MBE growth of dilute nitrides, mid-infrared semiconductors, and nano-hetero-epitaxy of compound semiconductors. Dr. Lin is a member of the Chinese Institute of Engineers and a senior member of IEEE.

Representative Publications 1.K. I. Lin, K. L. Lin, B. W. Wang, H. H. Lin, and J. S. Huang, “Double-band anticrossing in GaAsSbN induced by nitrogen and antimony incorporation,” Appl. Phys. Express, vol. 6, p. 121202, Dec. 2013
2.J. Y. Chen, B. H. Chen, Y. S. Huang, Y. C. Chin, H. S. Tsai, and H. H. Lin, “Photoluminescence characterization of GaAs/GaAs0.64P0.19Sb0.17/GaAs heterostructure,” J. Luminescence, vol. 136, pp. 178-181, Apr. 2013
3.Y. R. Chen, L. C. Chou, Y. J. Yang, and H. H. Lin, “Twinning in GaAsSb grown on (111)B GaAs by molecular beam epitaxy,” J. Physics D, vol. 46, p. 035306, Jan. 2013
4.D. N. Talwar, T. R. Yang, H. H. Lin, and Z. C. Feng, “Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InNxAs1-x/InP (001),” Appl. Phys. Lett., vol. 102, p. 052110, Jan. 2013
5.H. H. Lin, C. L. Chiou, Y. T. Lin, T. C. Ma, J. S. Wu, and Z. C. Feng, “Short range structure of dilute nitride GaAsSbN,” in: Physics and Mechanics of New Materials and Their Applications, edited by I. A. Parinov and S. H. Chang, Ch. 10, pp. 107-123, 2013
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