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本所公告-光電所公告
 
 
 
Title Growth and fabrication of molybdenum disulfide devices
Speaker Prof. Hsiang-Chen Wang
Date 2018/06/15(五)14:20~16:00
Venue R101, barry lam hall
Brief Bio of the Speaker
Hsiang-Chen Wang received the B.S. and the M. S. degrees in Physics from National Sun Yat-sen University in 1999, and 2001, respectively, the Ph.D. degree in the Graduate Institute of Electro-Optical Engineering, National Taiwan University in 2006. From 2007, he joined the AU Optronics Corp. (AUO) as the senior engineer of the department of color design. Since 2008, he has been with the National Chung Cheng University as a Faculty Member of the Graduate Institute of Opto-Mechatronics. His research areas include optoelectronic semiconductor materials and components, optical system design, ultra-fast laser spectroscopy, color engineering, color image recognition system, hyperspectral imaging technology. For selected key activities, he became visiting scholar of Department of Applied Material, University of Vilniaus at 2009, distinguished professor of Laser technology application center, Industrial Technology Research Institute South at 2010, and visiting scholar of Nikolaev Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences at 2015. For Honors and Awards, he got outstanding research award of National Chung Cheng University and Honorary Academy Award of International Inventor Prize at 2017. He has published more than 60 international journal and h-index is about 15.
Speech Abstract The two-dimensional layered material MoS2 is the most common transition metal dichalcogenide. The bulk MoS2 is a semiconductor material with an indirect energy gap (about 1.3 eV) with strong sulfur and molybdenum metal in the plane of the monolayer valence bond function, and there is a very weak Van der Waals force between layers. The monolayer MoS2 has a direct energy gap (about 1.9 eV) and an N-type semiconductor material with strong light emission characteristics, high planar electron mobility and tough mechanical properties, making it applicable applies to transistors, gas sensing detector, photodetector, battery, optoelectronic components. In the past, our laboratory successfully used CVD method to grow graphene and molybdenum disulfide films, combined with the hyper-spectral imaging for the optical properties detection of a few layers of thin film. On the other hand, we also have been successfully fabricated some nanostructures of cuprous oxide and zinc oxide. These nanostructures are made of anodized aluminum and two-beam interference technology. We expect to combine two-dimensional materials and semiconductor device fabrication into biochip through the use of biochips. Using biosensors based on semiconductor material synthesis and micro-nanostructure technology, we hope to develop a low-cost and fast response time, simultaneous detection of biosensors simple program. Recent studies have found that the change of surface stress of transition metal dichalcogenide will change its optical properties such as energy gap, absorption spectrum, even the electron mobility and induced magnetic force. The changes of these properties will enhance the optoelectronic performances of the transition metal dichalcogenide device and material properties. In this study, we will design the best transition metal dichalcogenide devices based on the previous research results. We will apply these devices to biological, gas, and photoelectric sensors and discuss the relationship between the photoelectric characteristics and stress distribution of various devices, and through the deep learning technology to enhance the photoelectric efficiency of devices.
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