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Major Equipment |
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Molecular beam epitaxy facilities, metal-organic chemical vapor deposition reactor, laser heated pedestal growth system, X-diffractometry equipment, I-V measurement equipment, organic-semiconductor thin-film deposition system, high-vacuum evaporation purifier, photo-luminescence measurement systems, electro-luminescence measurement systems, evaporator, dry-etching facilities, polishing facilities, temperature-variable photo-excitation time-of-flight carrier transport measurement system, low-temperature systems, high-frequency sampling oscilloscope, high-frequency signal generator, high-frequency signal amplifier, high-frequency optical sampling system, modulated photo—reflectance measurement system, ellipsometer, excimer laser, ultrafast Ti:sapphire lasers, ultrafast Cr:forsterite lasers, ultrafast fiber laser, streak camera, Q-switched Nd:YAG lasers, wide-range tunable narrow-band semiconductor laser, monochromators, spectrum analyzers, optical coherence tomography systems, multi-photon confocal microscope, fiber splicer, etc. |
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| Metal organic chemical vapor deposition (MOCVD) |
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| Plasma enhanced chemical vapor deposition (PECVD) |
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| Inductively coupled plasma reactive ion etching (ICP RIE)
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| UHV surface/interface analysis system |
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